淀 徳男

Strong bandedge luminescence from InN films grown on Si Substrates by electron cyclotron resonance-assisted molecular beam, Tokuo Yodo, Hiroaki Yona, Hironori Ando, Daiki Nosei, Yoshiyuki Harada 

Appl. Phys. Lett. 80(6), 968-970 2002年  

Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada and M.Tamura 

J. Cryst. Growth 237-239, 1104-1109 2002年  

Influences of substrate anneal before growth on initial growth process and charabteristics for GaN heteroepitaxial layers grown on Si(111) substrates by electron cyclotron resonance plasuma-assisted molecular-beam apitaxy, T.Yodo, M.Yamada, M.Araki, N.・・・ 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B14, 37-40 2002年  

Characterization of GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, T.Hirano and Y.Harada 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B4, 13-16 2002年  

Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B3, 9-12 2002年  

Characterization of polycrystalline GaN layers grown on alkali metal-free substrates by molecular-beam epitaxy assisted by electron resonance plasma, T.Yodo, T.Hirano and Y.Harada 

International Conference on Polycrystalline Semiconductors 2002, Extended Abstract PMO1, 80 2002年  

Strong bandedge luminescence from InN films grown on Si Substrates by electron cyclotron resonance-assisted molecular beam, Tokuo Yodo, Hiroaki Yona, Hironori Ando, Daiki Nosei, Yoshiyuki Harada 

Appl. Phys. Lett. 80(6), 968-970 2002年  

Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada and M.Tamura 

J. Cryst. Growth 237-239, 1104-1109 2002年  

Influences of substrate anneal before growth on initial growth process and charabteristics for GaN heteroepitaxial layers grown on Si(111) substrates by electron cyclotron resonance plasuma-assisted molecular-beam apitaxy, T.Yodo, M.Yamada, M.Araki, N.・・・ 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B14, 37-40 2002年  

Characterization of GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, T.Hirano and Y.Harada 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B4, 13-16 2002年  

Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada 

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract B3, 9-12 2002年  

Characterization of polycrystalline GaN layers grown on alkali metal-free substrates by molecular-beam epitaxy assisted by electron resonance plasma, T.Yodo, T.Hirano and Y.Harada 

International Conference on Polycrystalline Semiconductors 2002, Extended Abstract PMO1, 80 2002年  

Characterization of As-doped GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular beam epitaxy assisted by electron cyclotorn resonance, T.Yodo, H.Ando, Y.Harada and M.Yoshimoto 

20th Electronic Materials Symposium, Millennium Sympsium, Nara, Extended Abstracts J1, 199-202 2001年  

Influence of substrate nitridation before growth on initial growth processor of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE, T.Yodo, H.Ando, H.Tsuchiya, D.Nosei, M.Shimeno and Y.Harada 

J. Cryst. Growth 227-228, 431-436 2001年  

GROWTH AND CHARACTERIZATION ON InN HETEROEPITAXIAL LAYERS GROWN ON Si SUBSTARATES BY ECR-ASSISTED MBE, T.Yodo, H.Ando, D.Nosei and Y.Harada 

The fourth International Conference Nitride Semiconductors, ICNS-4, Denver, Colorado, USA, Proc. P22.13 88-84 2001年  

Investigation of Initial Growth Process for GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by ECR-assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada and M.Tamura 

The Thirteenth International Conference on Crystal Growth, Doshisha University, Kyoto, ICCG-13/ICVGE-11 Abstracts 02a-SB2-16, 309 2001年  

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada 

Phys. State. Sol. (b)228(1), 21-26 2001年  

ECR-ASSISTED MBE GROWTH OF GaN AND InN ON Si AND THEIR PROPERTIES, T.Yodo 

NITRIDE MATERIALS, PRONTIER SCIENCE RESEARCH CONFERENCES, BULLETIN of the STEFAN UNIVERSITY, La Jolla, California, FSRC BOOK OF ABSTRACTS 13(4), 83-88 2001年  

GaN growth on Si(111) with very thin amorphous SiN layer by ECR plasma-assisted MBE, Masao Tamura, Maximo Lopez-Lopez, Tokuo Yodo 

Superficies y Vacio 13, 80-88 2001年  

ECK-MBE法により作製したSi(001), Si(111)基板上GaNヘラロエピタキシャル膜の成長初期プロセスにおける成長前基板窒化の影響 

ジャーナル・オブ・クリスタルグロース 227-228 431-436 2001年