MISC

2002年

Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada

21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract

B3, 9-12

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