2002年
Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada
21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract
- 巻
- B3, 9-12
- 号