Tadashi Shiraishi - My portal

Profile Information

Affiliation: Others, Former Institution / Organization TOKAI UNIVERSITY SCHOOL OF ENGINEERING DEPARTMENT OF MATERIALS SCIENCE

Degree: Doctor of engineering(TOKAI UNIVERSITY)

J-GLOBAL ID: 200901005662618900
researchmap Member ID: 1000215385

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Research History

1974 - 1984

東海大学通信工学科助教授
1974 - 1984

Tokai University, Associate Professor
1984

- 東海大学通信工学科教授
1984

- Tokai University, Professor
1972 - 1974

東海大学通信工学科講師
1972 - 1974

Tokai University, Lecturer

Committee Memberships

Misc.

Isomerization effect in a-Si:H

Journal of Advanced Science, Vol.12、No.3, 206-209, 2001
Crystal Growth of AlN on AlN/Sapphire Interdegital Transducer at the Resonance Point of nitrogen-Electron Cyclotron plasma

IPAP Conf. Series the Institute of Pure and Applied Physics, 1 190-193, 2001
Crystal Growth of AlN on AlN/Sapphire Interdigital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma

IPAP Conf. Series. The Institute of Pure and Applied Physics, 1 190-193, 2001
Isomerization effect in a-SiiH

Journal of Advanced Science Society of Advanced Science, 12(3) 206-209, 2001
Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma

T Inushima, T Ashino, K Murano, T Shiraishi, VY Davydov, S Ohoya

JOURNAL OF CRYSTAL GROWTH, 209(2-3) 406-409, Feb, 2000
Phonon structure of InN grown by atomic layer epitaxy

T Inushima, T Shiraishi, VY Davydov

SOLID STATE COMMUNICATIONS, 110(9) 491-495, 1999
Lattice stability study of Nitride by the use of molecular dynamics

J. Crystal Growth, 189/190 696-700, 1998
Crystal growth of GaN/Si at the resonance point of Nitrogen ECR plasma

J. Crystal Growth, 189-190 358-362, 1998
On the properties of impurity band formed in the boron doped homoepitaxial diamond

Diamond and Related Materials, 7 874-878, 1998
Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond

T Inushima, T Nakama, T Shiraishi, M Mitsuhashi, T Watanabe

DIAMOND AND RELATED MATERIALS, 6(5-7) 852-855, Apr, 1997
Optical and electrical investigation of boron-doped homoepitaxial diamond

A Ogasawara, T Inushima, T Shiraishi, S Ohya, S Karasawa, H Shiomi

DIAMOND AND RELATED MATERIALS, 6(5-7) 835-838, Apr, 1997
Crystal Growth of AlN at Resonance Point of Nitrogen-ECR Plama,

Proceedings of the 3RD INTERNATIONAL CONFERENCE ON REACTIVE PLASMAS AND 14TH SYMPOSIUM ON PLASMA PROCESSING, Jan., 140-141,305-306, 1997
In Situ Optical Diagnosis of Pulsed Laser Deposition and Oxidation of YBa2Cu307-δ Thin Films,

Naoki Kanda, Masashi Kawasaki, Kenichi Nakano, Tadashi Shiraishi, Akihiro Takano, Hideomi Koinuma

Jpn. J. Appl. Phys., 36(4A) 2103-2108, 1997
Investigation of optical properties of InN grown by atomic layer epitaxy

T Inushima, T Yaguchi, A Nagase, A Iso, T Shiraishi

SILICON CARBIDE AND RELATED MATERIALS 1995, 142 971-974, 1996
DARK AND PHOTOCONDUCTIVITY BEHAVIORS OF AMORPHOUS AND CRYSTALLINE C-60 FILMS

T ASAKAWA, M SASAKI, T SHIRAISHI, K KOINUMA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 34(4A) 1958-1962, Apr, 1995
Open air photoresist ashing by a cold plasma torch : Catalytic effect of cathode material,

Appl. Phys. Lett., 66(17) 2188-2190, 1995
Optical and Electrical properties of InN growth by atomic layer epitaxy,

Proc. 7th Int. conf. InP and Related Materials, Sapporo,, IEEE#95(CH35720) 187-190, 1995
Electrical transport mechnism of Metal/Diamond/p-Si diode ,

Seiji Kanzaki, Toshihide Nakama, Hidekatsu Asai, Takeshi Nagata, Satoshi Suzuki, Tadashi Shiraishi, Hideomi Koinuma

Proceeding, Journal of Advanced Science, 6(1) 42, 1994
AC Plasma assist effect for diamond film deposition by hotfilament CVD

Satoshi Suzuki, Atsurou Nagase, Nobuyuki Seki, Hidekatsu Asai, Seiji Kanzaki, Tadashi Shiraishi, Hideomi Koinuma

Proceeding, Journal of Advanced Science,, 6(1) 28, 1994
Electrical properties of Metal/Daiamond/p-Si Diode

Toshihide Nakama, Seiji Kanzaki, Hidekatsu Asai, Takeshi Nagata, Satoshi Suzuki, Tadashi Shiraishi, Hideomi Koinuma

Proceeding, Journal of Advanced Science,, 6(1) 43, 1994

Books and Other Publications

セメスターのための基礎電磁気学

東海大学出版会, 1999

Professional Memberships

Research Projects

窒化物半導体薄膜の作製とその物性に関する研究

先端技術開発研究, 1989
Study on InN, AlN, Diamond and its related thin films

0103 (Japanese Only), 1989