KITADA Takahiro

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Name
KITADA Takahiro
URL
http://www.frc.tokushima-u.ac.jp/frc-nano/
Affiliation
Tokushima University
Section
Graduate School of Technology, Industrial and Social Sciences
Job title
Designated Professor
Degree
Doctor of Engineering(Osaka University)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2017
 - 
Today
Designated Professor, Graduate School of Technology, Industrial and Social Sciences, Tokushima University
 
Apr 2016
 - 
Mar 2017
Designated Professor, Graduate School of Science and Technology, Tokushima University
 
Apr 2011
 - 
Mar 2016
Designated Associate Professor, Institute of Technology and Science, Tokushima University
 
Apr 2007
 - 
Mar 2011
Guest Associate Professor, Institute of Technology and Science, Tokushima University
 
Apr 2006
 - 
Mar 2007
Guest Assistant Professor, Institute of Technology and Science, Tokushima University
 
Apr 1997
 - 
Mar 2006
Research Associate, Graduate School of Engineering Science, Osaka University
 
Jul 1996
 - 
Mar 1997
Research Associate, Faculty of Engineering Science, Osaka University
 

Education

 
Apr 1996
 - 
Jun 1996
Division of Materials Physics (Doctor's Degree Program), Graduate School of Engineering Science, Osaka University
 
Apr 1993
 - 
Mar 1995
Division of Materials Physics (Master's Degree Program), Graduate School of Engineering Science, Osaka University
 
Apr 1989
 - 
Mar 1993
Division of Materials Physics, Faculty of Engineering Science, Osaka University
 

Awards & Honors

 
Mar 2010
半導体量子ドットと微小光共振器による新規な面型光非線形デバイスの創製, 源内奨励賞, 財団法人エレキテル尾崎財団
Winner: Takahiro Kitada
 

Published Papers

 
Xiangmeng Lu, Naoto Kumagai, Yasuo Minami, Takahiro Kitada
Japanese Journal of Applied Physics   Vol.57(No.4S) 04FH07-04FH07   Mar 2018   [Refereed]
We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample w...
Takahiro Kitada, Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita
Japanese Journal of Applied Physics   Vol.57(No.4S) 04FH03-04FH03   Mar 2018   [Refereed]
Room-temperature two-color lasing was demonstrated by current injection into a GaAs/AlGaAs coupled multilayer cavity for terahertz emitting devices utilizing its difference-frequency generation (DFG) inside the structure. We prepared two epitaxial...
Xiangmeng Lu, Naoto Kumagai, Yasuo Minami, Takahiro Kitada
Applied Physics Express   Vol.11(No.1) 015501-015501   Jan 2018   [Refereed]
GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for referenc...
Xiangmeng Lu, Naoto Kumagai, Yasuo Minami, Takahiro Kitada, Toshiro Isu
Journal of Crystal Growth   Vol.477 221-224   Nov 2017   [Refereed]
We have investigated the effects of Sb-soak on InAs quantum dots (QDs) grown on (001) and (113)B GaAs substrates by molecular beam epitaxy. Surface morphologies of the QDs were characterized by atomic force microscopy. The optical properties of bu...
Xiangmeng Lu, Hiroto Ota, Naoto Kumagai, Yasuo Minami, Takahiro Kitada, Toshiro Isu
Journal of Crystal Growth   Vol.477 249-252   Nov 2017   [Refereed]
Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near...
Xiangmeng Lu, Hiroto Ota, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.56(No.4S) 04CH02-04CH02   Feb 2017   [Refereed]
We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω1, ω2, and ω3 were used for efficient wavelength c...
Yasuo Minami, Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.56(No.4S) 04CH01-04CH01   Feb 2017   [Refereed]
Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled c...
Takahiro Kitada, Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
IEICE Transactions on Electronics   Vol.E100-C(No.2) 171-178   Feb 2017   [Refereed][Invited]
Compact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. Two cavity m...
Takahiro Kitada, Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
Applied Physics Express   Vol.9(No.11) 111201-111201   Oct 2016   [Refereed]
Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers andthree distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different we...
Keisuke Murakumo, Yuya Yamaoka, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.55(No.4S) 04EH12-04EH12   Mar 2016   [Refereed]
We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and...
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.55(No.4S) 04EH09-04EH09   Mar 2016   [Refereed]
We fabricated a two-color surface emitting device of a coupled cavity structure, which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on (001) and (113)B GaAs substrates and the coupled multil...
Xiangmeng Lu, Shuzo Matsubara, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu
Journal of Crystal Growth   Vol.425 106-109   Jun 2015   [Refereed]
Self-assembled InAs quantum dots (QDs), without and with an AlAs cap, were grown on (311)B GaAs substrates by molecular beam epitaxy. Surface morphologies of QDs were characterized by atomic force microscopy. Photoluminescence (PL) was performed i...
Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Journal of Crystal Growth   Vol.425 303-306   Jun 2015   [Refereed]
InAs quantum dots (QDs) were introduced as efficient nonlinear materials into a GaAs/AlAs coupled multilayer cavity, which was recently demonstrated as a novel THz emission device based on difference-frequency generation (DFG) of the two cavity mo...
Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.54 04DG10-04DG10   Mar 2015   [Refereed]
A GaAs/AlAs coupled multilayer cavity structure was grown on a (001) GaAs substrate. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode light. The bottom cavity layer was ...
Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.54 04DG05-04DG05   Mar 2015   [Refereed]
We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure for an ultrafast wavelength conversion device. We found that significant improvement in the wavelength conversion was realized by introducing good nonlinear materials in t...
Haruyoshi Katayama, Michito Sakai, Junpei Murooka, Masafumi Kimata, Takahiro Kitada, Toshiro Isu, Mikhail Patrashin, Iwao Hosako, Yasuhiro Iguchi
Sensors and Materials   Vol.26(No.4) 225-234   May 2014   [Refereed]
We present the development status of a Type II superlattice (T2SL) infrared detector for future space applications in JAXA. InAs/GaSb T2SL is the only known infrared material that has a theoretically predicted higher performance than HgCdTe. We fi...
Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.53(No.4S) 04EG11-04EG11   Feb 2014   [Refereed]
A GaAs/AlAs coupled multilayer cavity structure with InAs quantum dots (QDs) was fabricated by wafer-bonding of two cavity structures grown individually. The wafer-bonding technique is important to control the spatial distribution of nonlinear pol...
Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Toshiro Isu
Japanese Journal of Applied Physics   Vol.53(No.4S) 04EG03-04EG03   Feb 2014   [Refereed]
Four-wave mixing (FWM) in a GaAs/AlAs triple-coupled multilayer cavity has been studied for novel planar wavelength conversion devices. Three half-wavelength cavity layers are connected in series using GaAs/AlAs distributed Bragg reflector multila...
Takahiro Kitada, Chiho Harayama, Ken Morita, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.10(No.11) 1434-1437   Nov 2013   [Refereed]
Twocolor lasing in a GaAs/AlAs coupled multilayer cavity has been studied for a novel type of terahertz emitting devices. In the structure, two cavity layers based on GaAs were connected by the intermediate GaAs/AlAs distributed Bragg reflector mu...
Takahiro Kitada, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Toshiro Isu
Applied Physics Letters   Vol.103(No.10) 101109-101109   Sep 2013   [Refereed]
Four-wave mixing in a triple-coupled multilayer cavity has been investigated for planar-type wavelength conversion devices. Three half-wavelength cavity layers are connected in series using GaAs/AlAs distributed Bragg reflector multilayers to yiel...
Takahiro Kitada, Hyuga Ueyama, Ken Morita, Toshiro Isu
Journal of Crystal Growth   Vol.378 485-488   Jul 2013   [Refereed]
Time-resolved transmission change of Er-doped InAs quantum dots (QDs) embedded in strain-relaxedIn0.45Ga0.55As barriers has been studied using different excitation wavelengths (1.4-1.55μm) to understand the QD-size dependence of the photocarrier r...
Takahiro Kitada, Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita, Toshiro Isu
Applied Physics Letters   Vol.102(No.25) 251118-251118   Jun 2013   [Refereed]
Terahertz wave generation was demonstrated by the difference frequency generation of two cavity modes in a polarization-controlled GaAs/AlAs coupled multilayer cavity. Inversion of the second-order nonlinear optical susceptibility was achieved by ...
Takahiro Kitada, Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita, Toshiro Isu
IEEE Photonics Journal   Vol.5(No.3) 6500308-6500308   Jun 2013   [Refereed]
Temporal terahertz waveforms generated from GaAs/AlAs coupled multilayer cavity structures were simulated and compared with experimental results. Femtosecond laser pulses covering two cavity-mode frequencies were used for the difference frequency ...
Yukinori Yasunaga, Hyuga Ueyama, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.52(No.4) 04CG09-04CG09   Apr 2013   [Refereed]
Strong ultrafast four-wave mixing signals at ?1.5 μm were demonstrated in a GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers. Time-resolved optical measurements using ...
Ken Morita, Hyuga Ueyama, Yukinori Yasunaga, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.52(No.4) 04CG04-04CG04   Mar 2013   [Refereed]
A GaAs/AlAs multilayer cavity with a λ/2 AlAs cavity layer, which includes Er-doped InAs quantum dots (QDs) embedded in a thin strain-relaxed In0.45Ga0.55As barrier, was fabricated. Structural and optical properties were characterized by scanning ...
Hidetada Komatsu, Zhao Zhang, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.52(No.4) 04CG06-04CG06   Mar 2013   [Refereed]
GaAs/air multilayer cavity structure is expected as a novel planar-type nonliner optical device because of the strong enhancement of optical electric fileds in the cavity. The optical Kerr signal was estimated to be two order of magnitude larger t...
Hyuga Ueyama, Tomoya Takahashi, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.51(No.4) 04DG06-04DG06   Apr 2012   [Refereed]
Er-doped InAs quantum dots (QDs) embedded in strain-relaxed InGaAs barriers, which exhibit an extremely short carrier decay time of 3 ps due to the nonradiative process, are superior materials for ultrafast all-optical switches using a GaAs/AlAs m...
Sho Katoh, Toshikazu Takimoto, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.51(No.4) 04DG05-04DG05   Apr 2012   [Refereed]
Terahertz (THz) radiation was demonstrated using a GaAs/AlAs coupled multilayer cavity grown on a (113)B GaAs substrate. Two cavity modes realized in the high-reflection band were simultaneously excited using ultrashort laser pulses for the differ...
Takuto Ito, Manato Deki, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Oshima
Journal of Laser Micro/Nanoengineering   Vol.7(No.1) 16-20   Feb 2012   [Refereed]
Ken Morita, Sho Katoh, Toshikazu Takimoto, Fumiya Tanaka, Yoshinori Nakagawa, Shingo Saito, Takahiro Kitada, Toshiro Isu
Applied Physics Express   Vol.4(No.10) 102102-102102   Oct 2011   [Refereed]
We observed terahertz (THz) radiation using difference frequency generation (DFG) of two cavity modes in a (113)B GaAs/AlAs coupled multilayer cavity. 100 fs laser pulses were used to simultaneously excite two cavity modes, and oscillations with a...
Takahiro Kitada, Tomoya Takahashi, Hyuga Ueyama, Ken Morita, Toshiro Isu
Journal of Crystal Growth   Vol.323(No.1) 241-243   May 2011   [Refereed]
Effects of erbium doping on photocarrier lifetime have been investigated for self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers grown on (100) GaAs substrates by molecular beam epitaxy. Time-resolved transmis...
Takahiro Kitada, Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Toshiro Isu
Proceedings of SPIE   Vol.7937 1H-1-1H-1   May 2011   [Refereed][Invited]
GaAs/AlAs coupled multilayer cavity structures on high-index substrates have been proposed as novel terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region are realized when two cavity layers are c...
Ken Morita, Tomoya Takahashi, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.50(No.4) 04DG02-04DG02   Apr 2011   [Refereed]
Optical Kerr signals markedly enhanced by increasing quality (Tex) factor in a GaAs/AlAs multilayer cavity have been demonstrated using time-resolved optical measurements. In the optical Kerr measurements, the spectral width of a laser pulse was w...
Fumiya Tanaka, Toshikazu Takimoto, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.50(No.4) 04DG03-04DG03   Apr 2011   [Refereed]
Time-resolved measurements of sum-frequency generation (SFG) of two cavity modes, which were realized in a GaAs/AlAs coupled multilayer cavity structure grown on a (113)B-oriented GaAs substrate, were performed. Strongly enhanced SFG and second-ha...
Manato Deki, Takuto Ito, Minoru Yamamoto, Takuro Tomita, Shigeki Matsuo, Shuichi Hashimoto, Takahiro Kitada, Toshiro Isu, Shinobu Onoda, Takeshi Ohshima
Applied Physics Letters   Vol.98(No.13) 133104-1-133104-3   Mar 2011   [Refereed]
Takahiro Kitada, Akari Mukaijo, Tomoya Takahashi, Takuya Mukai, Ken Morita, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.8(No.2) 334-336   Feb 2011   [Refereed]
Excitation wavelength dependence (λ = 1.35-1.5 m) of timeresolved transmission change was measured for the Si δ-doped InAs quantum dots (QDs) with strainrelaxed In0.35Ga0.65As barriers to clarify the QDsize dependence of photocarrier relaxation. T...
Takahiro Kitada, Akari Mukaijo, Tomoya Takahashi, Takuya Mukai, Ken Morita, Toshiro Isu
Physica E: Low-dimensional Systems and Nanostructures   Vol.42(No.10) 2540-2543   Oct 2010   [Refereed]
We have studied effects of Si and Be δ-doping on photocarrier lifetime in self-assembled InAs quantum dots (QDs) with strain-relaxed In0:35Ga0:65As barriers grown on (100) GaAs substrates by molecular beam epitaxy. Relaxation of photocarriers gene...
Ken Morita, Tomoya Takahashi, Toshiyuki Kanbara, Shinsuke Yano, Takuya Mukai, Takahiro Kitada, Toshiro Isu
Physica E: Low-dimensional Systems and Nanostructures   Vol.42(No.10) 2505-2508   Oct 2010   [Refereed]
A strong and ultrafast optical Kerr signal at ~1:5 μm has been demonstrated in a GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0:35Ga0:65As barriers. Time-resolved optical measurements u...
Ken Morita, Nobuyoshi Niki, Takahiro Kitada, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.7(No.10) 2482-2485   Sep 2010   [Refereed]
Photoluminescence (PL) as a consequence of a twophoton absorption excitation was measured in a GaAs/AlGaAs (001) multiple quantum well (MQW) at room temperature and an optical anisotropy of the twophoton absorption was investigated by PL intensity...
Toshiro Isu, Toshiyuki Kanbara, Tomoya Takahashi, Ken Morita, Takahiro Kitada
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.7(No.10) 2478-2481   Sep 2010   [Refereed]
Optical Kerr signals from GaAs/AlAs multilayer microcavities with GaAs/AlGaAs multiquantum wells (MQW) in the halfwavelength cavity layer were investigated. The cavitymodewavelengths were set at the resonance region of twophoton absorption of the ...
Ken Morita, Fumiya Tanaka, Tomoya Takahashi, Takahiro Kitada, Toshiro Isu
Applied Physics Express   Vol.3(No.7) 072801-072801   Jul 2010   [Refereed]
We have investigated optical anisotropy of sum frequency generation (SFG) of two cavity modes realized in a (113)B GaAs/AlAs coupled multilayer cavity. The SFG signals were measured by simultaneous excitation of two cavity modes with an optical fr...
Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.49(No.4) 04DG01-04DG01   Apr 2010   [Refereed]
A strong sum frequency generation (SFG) has been demonstrated using two cavity modes realized in a GaAs/AlAs coupled multilayer cavity structure in which two GaAs half-wavelength cavity layers are coupled by an intermediate distributed Bragg refle...
Tomoya Takahashi, Takuya Mukai, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.49(No.4) 04DG02-04DG02   Apr 2010   [Refereed]
A GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers has been studied for planar-type optical Kerr gate switches. The multilayer cavity structure with smooth GaAs/AlAs i...
Takuro Tomita, Masahiro Iwami, Minoru Yamamoto, Manato Deki, Shigeki Matsuo, Shuichi Hashimoto, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu, Shingo Saito, Kiyomi Sakai, Shinobu Onoda, Takeshi Ohshima
Materials Science Forum   Vol.645-648 239-242   Jan 2010   [Refereed]
Takahiro Kitada, Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Toshiro Isu
Applied Physics Letters   Vol.95(No.11) 111106-111106   Sep 2009   [Refereed]
GaAs/AlAs coupled multilayer cavity structures are proposed as terahertz emission devices. Two cavity modes with an optical frequency difference in the terahertz region can be realized when two cavity layers are coupled by an intermediate distribu...
Ken Morita, Tomoya Takahashi, Takahiro Kitada, Toshiro Isu
Applied Physics Express   Vol.2(No.8) 082001-082001   Aug 2009   [Refereed]
Using time-resolved optical measurements, a strong, ultrafast optical Kerr signal was demonstrated in a GaAs/AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed InGaAs barrier layers. The large optic...
Takahiro Kitada, Toshiyuki Kanbara, Shinsuke Yano, Ken Morita, Toshiro Isu
Japanese Journal of Applied Physics   Vol.48(No.8) 080203-080203   Aug 2009   [Refereed]
The enhanced optical Kerr effect in a GaAs/AlAs multilayer cavity has been studied by numerical simulation using the self-consistent transfer matrix method. The simulated Kerr signal intensity of the cavity mode (Tex nm) markedly incre...
Takuya Mukai, Tomoya Takahashi, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.48(No.4) 04C106-04C106   Apr 2009   [Refereed]
Excitation wavelength dependence (Tex nm) of carrier relaxation was investigated for self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers grown on GaAs(100) substrates. Fast (Tex ps)...
Toshiyuki Kanbara, Shoya Nakano, Shinsuke Yano, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.48(No.4) 04C105-04C105   Apr 2009   [Refereed]
A strong enhancement of two-photon absorption (TPA) has been demonstrated in a 30-period GaAs/AlAs multilayer with a GaAs half-wavelength (Tex/2) cavity layer. In order to measure the time-resolved TPA signals, we successfully developed a sele...
Tomoya Takahashi, Takuya Mukai, Ken Morita, Takahiro Kitada, Toshiro Isu
Japanese Journal of Applied Physics   Vol.48(No.4) 04C128-04C128   Apr 2009   [Refereed]
Self-assembled InAs quantum dots (QDs) were grown on (001) and (113)B GaAs substrates by molecular beam epitaxy (MBE) under a slow growth rate condition of 0.0364 μm/h. Low-temperature (4 K) photoluminescence (PL) lineshape of the (001) QD sample ...
Ken Morita, Toshiyuk Kanbara, Shinsuke Yano, Takahiro Kitada, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.6(No.6) 1420-1423   Apr 2009   [Refereed]
Optical Kerr signals of GaAs/AlAs multilayer cavities with various quality factor (Q) were measured by an optical pump and probe technique with ultrashort pulses. Although the light intensity is enhanced in the cavities by Q, light power is restri...
Takahiro Kitada, Takuya Mukai, Tomoya Takahashi, Ken Morita, Toshiro Isu
Journal of Crystal Growth   Vol.311(No.7) 1807-1810   Apr 2009   [Refereed]
Self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In0.35Ga0.65As barriers were grownon GaAs (10 0) substrates by molecular beam epitaxy. Relaxation of lattice strain in the In0.35Ga0.65As nucleation layer was monitored by in situ r...
Ken Morita, Kanbara Toshiyuki, Yano Shinsuke, Takahiro Kitada, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.6(No.1) 137-140   2009   [Refereed]
Optical Kerr response for a shortinputpulse of a GaAs/AlAs multilayer cavity which has a narrow cavity mode width was measured by an optical pump and probe technique. We observed a strong asymmetric temporal profile of the optical Kerr signal in t...
Takahiro Kitada, Nobuyoshi Niki, Ken Morita, Toshiro Isu
Japanese Journal of Applied Physics   Vol.47(No.10) 7839-7841   Oct 2008   [Refereed]
In-plane optical anisotropy was calculated for InGaAs strained quantum wells (QWs) with finite barrier potential on high-index (Tex)-oriented GaAs substrates. The mixing effects of the spin orbit split-off (SO) band were included by using $6 ime...
Takahiro Kitada, Toshiyuki Kanbara, Ken Morita, Toshiro Isu
Applied Physics Express   Vol.1(No.9) 092302-092302   Sep 2008   [Refereed]
An optical Kerr signal has been simulated for GaAs/AlAs multilayer cavity structures by using the self-consistent transfer matrix method. Enhancement of the Kerr signal intensity was clearly demonstrated for the cavity mode (Tex nm) owi...
Takahiro Kitada, S Kusunoki, M Kinouchi, Ken Morita, Toshiro Isu, S Shimomura
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.5(No.9) 2753-2755   May 2008   [Refereed]
Anisotropy of the interface roughness has been investigated for pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation doped quantum wells (MDQWs) grown on (411)A and (100) InP substrates by molecular beam epitaxy. Significant difference of lowtem...
Nobuyoshi Niki, Ken Morita, Takahiro Kitada, Toshiro Isu
Physica Status Solidi (C) Current Topics in Solid State Physics   Vol.5(No.9) 2756-2759   May 2008   [Refereed]
We investigate anisotropic properties of strained InGaAs quantum wells on the high index (11n)A (n = 3,4,5) GaAs substrates. The polarization dependence of photoluminescence of strained InGaAs quantum wells were measured, and optical anisotropy wa...
Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.301-302 172-176   Sep 2007   [Refereed]
We have investigated substrate off-angle dependence of surface segregation of In atoms during molecular beam epitaxy (MBE) of pseudomorphic In0:08Ga0:92As/GaAs superlattices (SLs) on (n11)A-oriented GaAs substrates (n=3-5). Surface segregation len...
Issei Watanabe, Keisuke Shinohara, Takahiro Kitada, Satoshi Shimomura, Akira Endoh, Yoshimi Yamashita, Takashi Mimura, Satoshi Hiyamizu, Toshiaki Matsui
Journal of Crystal Growth   Vol.301-302 1025-1029   Sep 2007   [Refereed]
We investigated the contact resistance of a non-alloyed Ti/Pt/Au ohmic electrode to obtain thermally stable sourcedrain resistance of cryogenically cooled In0:75Ga0:25As=In0:52Al0:48As high electron mobility transistors (HEMTs) fabricated on (4 1 ...
Issei Watanabe, Keisuke Shinohara, Takahiro Kitada, Satoshi Shimomura, Akira Endoh, Yoshimi Yamashita, Takashi Mimura, Satoshi Hiyamizu, Toshiaki Matsui
Japanese Journal of Applied Physics   Vol.46(No.4B) 2325-2329   Apr 2007   [Refereed]
We achieved a current gain cutoff frequency (Tex) of 310 GHz at a cryogenic temperature (16 K) in a 195-nm-long gate In0.75Ga0.25As/In0.52Al0.48As high-electron-mobility transistor (HEMT) fabricated on a (411)A-oriented InP substrate. Th...
Yu Higuchi, Shinji Osaki, Yoshifumi Sasahata, Takahiro Kitada, Satoshi Shimomura, Mutsuo Ogura, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.46(No.7) L138-L141   Feb 2007   [Refereed]
We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriente...
I. Watanabe, K. Shinohara, Takahiro Kitada, S. Shimomura, Y. Yamashita, A. Endoh, T. Mimura, S. Hiyamizu, T. Matsui
IEEE Transactions on Electron Devices   Vol.53(No.11) 2842-2846   Nov 2006   [Refereed]
An extremely high maximum transconductance gmmax of 2.25 S/mm and a cutoff frequency fT of 310 GHz was achieved at a cryogenic temperature (16 K) in a 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistor (HEMT) fabricated on...
H. Sagisaka, Takahiro Kitada, S. Shimomura, S. Hiyamizu, I. Watanabe, T. Matsui, T. Mimura
Journal of Vacuum Science & Technology B   Vol.24(No.6) 2668-2671   Nov 2006   [Refereed]
The authors achieved considerable suppression of surface segregation of Si dopants in In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistor (HEMT) structures grown on (411)A InP substrates by molecular beam epitaxy (MBE). The (411)A HEMT...
Y. Higuchi, S. Osaki, Takahiro Kitada, S. Shimomura, Y. Takasuka, M. Ogura, S. Hiyamizu
Solid-State Electronics   Vol.50(No.6) 1137-1140   Jun 2006   [Refereed]
Self-organized GaAs/(GaAs)4(AlAs)2 quantum wires (QWRs) grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5)B GaAs QWR-VCSEL wit...
S. Shimomura, T. Toritsuka, A. Uenishi, Takahiro Kitada, S. Hiyamizu
Physica E: Low-dimensional Systems and Nanostructures   Vol.32(No.1-2) 346-349   May 2006   [Refereed]
Vertically coupled quantum wires (QWRs) have been made by alternately stacking nominally 3.6 nm thick In0.53Ga0.47As selforganized QWR layers and 1 nm thick In0.52Al0.48As barrier layers on (2 2 1)A-oriented InP substrates by molecular beam epitax...
H. Hino, A. Shigenobu, K. Ohmori, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.23(No.6) 2526-2529   Nov 2005   [Refereed]
A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)2(In0.52Al0.48As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy. Threefold 3.6-nm-thick In0.53Ga0.47As QWR layers were used as an active layer, where lateral...
I. Watanabe, K. Shinohara, Takahiro Kitada, S. Shimomura, Y. Yamashita, A. Endoh, T. Mimura, T. Matsui, S. Hiyamizu
IEEE Electron Device Letters   Vol.26(No.7) 425-428   Jul 2005   [Refereed]
We achieved a maximum transconductance (g/sub m/) of 2.25 S/mm at 16 K for a 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As pseudomorphic high-electron mobility transistor (PHEMT) fabricated on a [411]A-oriented InP substrate, w...
M. Imura, H. Kurohara, Y. Masui, T. Asano, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.23(No.3) 1158-1161   May 2005   [Refereed]
In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well (QW) structures were grown on a (411)A(411)Aoriented InP substrate by molecular-beam epitaxy (MBE). Photoluminescence (PL) spectra at 12K indicated that interface flatness of a 2.4 nm thick In0.53Ga0.47As...
S. Katoh, H. Sagisaka, M. Yamamoto, I. Watanabe, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.23(No.3) 1154-1157   May 2005   [Refereed]
Interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells (MD-QWs) grown on the (411)A and (100) InP substrates by molecular beam epitaxy was characterized by sheet electron concentration (Ns) dependence of ...
Takahiro Kitada, T. Aoki, I. Watanabe, S. Shimomura, S. Hiyamizu
Applied Physics Letters   Vol.85(No.18) 4043-4045   Nov 2004   [Refereed]
Much enhanced electron mobility of 105000cm2/Vs with a high sheet electron concentration (Ns) of 3.1×1012cm-12 was obtained at 77K in pseudomorphic In0.74Ga0.26As/In0.46Al0.54}As modulation-doped quantum well (MD-QW) grown on a (411)A InP substrat...
Takahiro Kitada, D. Kawazoe, S. Shimomura, S. Hiyamizu
Physica E: Low-dimensional Systems and Nanostructures   Vol.21(No.2-4) 722-726   Jan 2004   [Refereed]
GaAs/AlAs quantum wells (QWs) with effectively atomically at heterointerfaces over a large area ["(4 1 1)A super-atinterfaces"] grown on (4 1 1)A GaAs substrates by molecular beam epitaxy were characterized by room-temperature photoreectance(PR) m...
Issei Watanabe, Kenji Kanzaki, Takahiro Kitada, Masashi Yamamoto, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.251 90-95   Jan 2003   [Refereed]
In order to characterize interface roughness scattering, two-dimensional electron gas (2DEG) mobility in (4 1 1)A and(1 0 0) selectively-doped In0:53Ga0:47As/In0:52Al0:48As quantum well (QW) HEMT structures, which were grown on InP substrates by m...
Yu Higuchi, Masaya Uemura, Yuji Masui, Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.251(No.1-4) 80-84   Jan 2003   [Refereed]
The surface migration length of As4 molecules on (4 1 1)A surfaces during molecular beam epitaxy has been determined from lateral profiles of As content (x) in GaAsxP1-x layers grown on (4 1 1)A GaAs substrates with a (1 0 0) side-slope using As4 ...
Y. Tatsuoka, M. Uemura, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.20(No.1) 282-285   Jan 2002   [Refereed]
We investigated substrate orientation and As species dependence of GaAsxP1-xGaAsxP1xlayers grown on (100), (n11)A,and (n11) B GaAs substrates (n=3,4, and 5) by molecular beam epitaxy at a substrate temperature of 535°C. When GaAsP layers were grow...
Issei Watanabe, Takahiro Kitada, Kenji Kanzaki, Daisaku Kawaura, Masashi Yamamoto, Satoshi Shimomura, Satoshi Hiyamizu
Physica E: Low-dimensional Systems and Nanostructures   Vol.13(No.2-4) 1195-1199   Jan 2002   [Refereed]
We investigated atness of growth-interrupted InAlAs and InGaAs surfaces using In0:53Ga0:47As/In0:52Al0:48As quantum wells (QWs) with well widths (Lw) of 0.6-12 nm grown on a (411)A-oriented InP substrate by molecular beam epitaxy. In the (411)A QW...
Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Kenji Kanzaki, Satoshi Shimomura, Satoshi Hiyamizu
Physica E: Low-dimensional Systems and Nanostructures   Vol.13(No.2-4) 657-662   Jan 2002   [Refereed]
Single-particle relaxation times in In0:7Ga0:3As/In0:52Al0:48As quantum well high electron mobility transistor (QW-HEMT) structures for two subbands (i = 0 and 1) are studied by fast Fourier transform analysis of Shubnikoov-de Haas (SdH) oscillati...
Yasuhide Ohno, Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.40 1058-1060   Oct 2001   [Refereed]
We have investigated the transport properties of electron gas in a GaAs/(GaAs)4(AlAs)2 quantum well with a regularly corrugated upper interface formed on (775)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The electron mobility perpen...
Takahiro Kitada, Keisuke Nii, Tetsuya Hiraoka, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Vacuum Science & Technology B   Vol.19(No.4) 1546-1549   Jul 2001   [Refereed]
Improved interface abruptness was achieved in pseudomorphic InxGa1-xAs/Al0.34Ga0.66As quantum wells (QWs) (x~0.2)with extremely flat interfaces over a wafer-size area [(411)A superflat interfaces] grown on (411)A GaAs substrates by decreasing the ...
I. Watanabe, K. Kanzaki, T. Aoki, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.19(No.4) 1515-1518   Jul 2001   [Refereed]
We have carried out a Shubnikovde Haas (SdH) measurement at 4 K and investigated the electronic properties and scattering mechanisms in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As As quantum well high electron mobility transistor (QW-HEMT) structu...
Yasuaki Tatsuoka, Masaya Uemura, Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.227-228 266-270   Jan 2001   [Refereed]
Surface migration lengths of As adatoms on (411)A GaAs surfaces during molecular beam epitaxy were determined for the rst time from lateral proles of the arsenic content (x) in the GaAsxP1-x layers grown on GaAs channeled substrates (CSs) using As...
Satoshi Shimomura, Yoshiaki Kitano, Hidehiko Kuge, Takahiro Kitada, Kazuo Nakajima, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.227-228 72-76   Jan 2001   [Refereed]
High-optical quality lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (QWs) with indium contents of x=0.18-0.19 have been successfully grown on (4 1 1)A- and (1 0 0)-oriented InGaAs ternary substrates by molecular beam epitaxy. Strong photolumi...
Takahiro Kitada, Toyohiro Aoki, Issei Watanabe, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Crystal Growth   Vol.227-228 289-293   Jan 2001   [Refereed]
We have investigated channel thickness (Lw) dependence of transport properties of two-dimensional-electron gas (2DEG) in pseudomorphic In0:74Ga0:26As/In0:52Al0:48As quantum well high electron mobility transistor (QW-HEMT) structures with extremely...
Masataka Higashiwaki, Takahiro Kitada, Toyohiro Aoki, Satoshi Shimomura, Yoshimi Yamashita, Akira Endoh, Kohki Hikosaka, Takashi Mimura, Toshiaki Matsui, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.39 720-722   Jul 2000   [Refereed]
In this paper, we report on the material and device characteristics of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobil...
Toyohiro Aoki, Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Vacuum Science & Technology B   Vol.18(No.3) 1598-1600   May 2000   [Refereed]
We investigated flatness of heterointerfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells (QWs) with well widths Lw of 1.3, 1.7, and 3.4 nm grown on (411)A InP substrates by molecular beam epitaxy (MBE). Full width at half maximum ...
Takahiro Kitada, Yasuaki Tatsuoka, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Vacuum Science & Technology B   Vol.18(No.3) 1579-1582   May 2000   [Refereed]
As4 pressure dependence of surface segregation of In atoms during molecular beam epitaxy (MBE) growth of pseudomorphic In0.08Ga0.92As/GaAs(7.5 nm/11.2 nm) superlattices (SLs) on (411)A GaAs substrates was investigated by high resolution x-ray diff...
Y. Kitano, R. Kuriyama, Takahiro Kitada, S. Shimomura, S. Hiyamizu, Y. Nishijima, H. Ishikawa
Journal of Vacuum Science & Technology B   Vol.18(No.3) 1576-1578   May 2000   [Refereed]
We have investigated lateral uniformity of pseudomorphic In0.05Ga0.95As/Al0.3Ga0.7As quantum wells (QWs) with well widths Lw of 2.4 and 3.6 nm grown on a (411)A InxGa1-x As ternary substrate by molecular beam epitaxy. The lateral variation of In c...
H. Kamimoto, Y. Tatsuoka, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.18(No.3) 1572-1575   May 2000   [Refereed]
We have investigated the influence of V(As4+P2)/III(Ga)V(As4+P2)/III(Ga)pressure ratio on interface flatness of In0.18Ga0.82As/GaAs1-yPy(2.9 nm/20 nm) single quantum wells (SQWs) (y=0.18-0.32)grown on (100)- and (n11)A-oriented GaAs substrates (n=...
Y. Tatsuoka, H. Kamimoto, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.18(No.3) 1549-1552   May 2000   [Refereed]
Surface migration of group V atoms (As and P) during molecular beam epitaxy was investigated for the first time by measuring lateral profiles of phosphorus content in GaAsP layers grown on (100)GaAs channeled substrates (CSs) with 12-16 μm wide (n...
Takahiro Kitada, Keisuke Nii, Tetsuya Hiraoka, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Vacuum Science & Technology B   Vol.17(No.4) 1482-1484   Jul 1999   [Refereed]
High-quality InAlAs layers lattice matched to InP were successfully grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution x-ray diffraction and photoluminescence (PL) measurements of InAlAs layers grown on (411)A...
K. Nii, R. Kuriyama, T. Hiraoka, Takahiro Kitada, S. Shimomura, S. Hiyamizu
Journal of Vacuum Science & Technology B   Vol.17(No.3) 1167-1170   May 1999   [Refereed]
Pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum wells (QWs) with well widths (Lw)of 13, 15, 17, 19, 21, and 23 nm were grown simultaneously on the (411)A and (100) GaAs substrates at 480°C by molecular beam epitaxy. The critical thickness of a...
Yasuaki Tatsuoka, Hitoshi Kamimoto, Yoshiaki Kitano, Takahiro Kitada, Satoshi Shimomura, Satoshi Hiyamizu
Journal of Vacuum Science & Technology B   Vol.17(No.3) 1155-1157   May 1999   [Refereed]
We investigated optical properties of GaAs/GaAs1-xPx(x~0.2)quantum wells (QWs) with each well width (Lw)of 2.7-10.0 nm grown on (100) and (n11)A GaAs substrates (n=3, 4, 5) by molecular beam epitaxy with the use of P2and As4 molecular beams genera...
Takahiro Kitada, Masanobu Ohashi, Satoshi Shimomura, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.38 1888-1891   Apr 1999   [Refereed]
High-quality InxGa1-xAs layers (0.505 ≦ x ≦ 0.545) were grown on (411)A-oriented InP substrates by molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD) measurements of the (411)A InxGa1-xAs layers showed no relaxation of lattice...
S. Hiyamizu, S. Shimomura, Takahiro Kitada
Microelectronics Journal   Vol.30 379-385   Jan 1999   [Refereed]
Extremely flat interfaces, i.e. effectively atomically flat interfaces over a wafer-size area were realized in GaAs/AlGaAs quantum wells (QWs) grown on (411)A GaAs substrates by molecular beam epitaxy (MBE). These flat interfaces are called as "(4...
Takahiro Kitada, Tatsuya Saeki, Masanobu Ohashi, Satoshi Shimomura, Akira Adachi, Yasunori Okamoto, Naokatsu Sano, Satoshi Hiyamizu
Journal of Electronic Materials   Vol.27(No.9) 1043-1046   Sep 1998   [Refereed]
Effectively atomically flat interfaces over a macroscopic area ("(411)A super-flat interfaces") were successfully achieved in In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a sub...
Masanobu Ohashi, Tatsuya Saeki, Takahiro Kitada, Satoshi Shimomura, Yasunori Okamoto, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.37 4515-4517   Aug 1998   [Refereed]
Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As (x = 0.085-0.15) quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (Ts) of 520°C by molecular beam epitaxy (MBE). ...
Takahiro Kitada, Tatsuya Saeki, Masanobu Ohashi, Satoshi Shimomura, Satoshi Hiyamizu
Solid-State Electronics   Vol.42 1575-1579   Jul 1998   [Refereed]
An In0.08Ga0.92As/GaAs strained-layer superlattice (SLS) grown on a (411)A GaAs substrate by molecular beam epitaxy (MBE) was characterized by high resolution X-ray diffraction (HRXRD) and low-temperature photoluminescence (PL) measurements. The (...
Tatsuya Saeki, Takeharu Motokawa, Takahiro Kitada, Satoshi Shimomura, Akira Adachi, Yasunori Okamoto, Naokatsu Sano, Satoshi Hiyamizu
Japanese Journal of Applied Physics   Vol.36 1786-1788   Mar 1997   [Refereed]
Effectively atomically flat interfaces over a macroscopic area (super-flat interfaces) have been achieved in pseudomorphic InxGa1-xAs/Al0.3Ga0.7As (x = 0.0, 0.04, 0.07) quantum wells (QWs) with well widths (Lw) of 1.2-11.8 nm grown on (411)A GaAs ...
S. Hiyamizu, T. Saeki, T. Motokawa, S. Shimomura, Takahiro Kitada, A. Adachi, Y. Okamoto, T. Kusunoki, K. Nakajima, N. Sano
Superlattices and Microstructures   Vol.21(No.1) 107-111   Jan 1997   [Refereed]
Pseudomorphic In0.04Ga0.96As/Al0.3Ga0.7As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In0.04Ga0.96As ternary substrates by MBE at growth temperature of Ts= 520°C. The interface flatness of th...
S. Shimomura, K. Shinohara, Takahiro Kitada, S. Hiyamizu, Y. Tsuda, N. Sano, A. Adachi, Y. Okamoto
Journal of Vacuum Science & Technology B   Vol.13(No.2) 696-698   Mar 1995   [Refereed]
Effectively atomically flat interfaces over a macroscopic area (200 μmo/) have been achieved in GaAs/AlAs quantum wells (QWs) with well widths of 4.8 to 12 nm grown on (411)A GaAs substrates by molecularbeam epitaxy (MBE). A single and very narrow...
Takahiro Kitada, A. Wakejima, N. Tomita, S. Shimomura, A. Adachi, N. Sano, S. Hiyamizu
Journal of Crystal Growth   Vol.150 487-491   Jan 1995   [Refereed]
Lateral profiles of In content in a 1.5 μm thick InxGa1-xAs (x~0.2) layer grown on GaAs channeled substrates (CSs) with (411)A side-slopes by molecular beam epitaxy (MBE) have been investigated with the use of energy dispersive X-ray spectroscopy ...

Misc

 
冷水 佐壽, 下村 哲, Takahiro Kitada
OYO BUTURI   Vol.72(No.3) 291-297   Mar 2003

Conference Activities & Talks

 
Time Resolved Measurement of Two-Color Laser Lights Emitted from a GaAs/AlGaAs Coupled Multilayer Cavity
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
23rd Microoptics Conference (MOC 2018)   14 Oct 2018   
InGaAs量子井戸中の拡散電子スピンに作用する内部有効磁場
川口 晃平, 深澤 俊樹, 志田 博貴, 齋藤 康人, Takahiro Kitada, 石谷 善博, Ken Morita
2018年 第79回 応用物理学会秋季学術講演会   21 Sep 2018   
GaAs/AlGaAs多層膜結合共振器への電流注入による二波長発振の動的振る舞いの温度依存性
Kotaro Ogusu, Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
2018年 第79回 応用物理学会秋季学術講演会   18 Sep 2018   
Sublattice Reversal in AlAs/Ge/AlAs Heterostructures Grown on (113)A GaAs Substrate
Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
2018年 第79回 応用物理学会秋季学術講演会   18 Sep 2018   
半導体多層膜結合共振器による赤外二波長レーザー発振 [Invited]
Takahiro Kitada, Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita
2018年電子情報通信学会ソサイエティ大会   13 Sep 2018   
Sublattice Reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs Heterostructures Grown on (113)A and (113)B GaAs Substrates
Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
20th International Conference on Molecular Beam Epitaxy(ICMBE 2018)   6 Sep 2018   
Time-resolved spectral measurements of two-color surface-emitting lasers based on a GaAs/AlGaAs coupled multilayer cavity
Kotaro Ogusu, Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
2018年度 応用物理・物理系学会 中国四国支部 合同学術講演会   4 Aug 2018   
Temperature Tuning of Two-Color Lasing Using a Coupled GaAs/AlGaAs Multilayer Cavity by Current Injection
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita, Takahiro Kitada
The Compound Semiconductor Week 2018 (CSW2018),   30 May 2018   
Simultaneous Oscillation of Two-Color Laser Lights from a GaAs/AlGaAs Coupled Multilayer Cavity
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
The Conference on Lasers and Electro-Optics (CLEO 2018)   15 May 2018   
InGaAs量子井戸をもつGaAs結合共振器からの電流注入による室温での2波長レーザーの時間特性
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
第65回応用物理学会春季学術講演会   20 Mar 2018   
波長切り出し系を利用した通信波長帯スピン時空間ダイナミクス計測
川口 晃平, 深澤 俊樹, Takahiro Kitada, 石谷 善博, Ken Morita
第65回応用物理学会春季学術講演会   20 Mar 2018   
InGaAs量子井戸を活性層とする結合共振器への電流注入によるニ波長レーザの温度特性
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita, Takahiro Kitada
第65回応用物理学会春季学術講演会   19 Mar 2018   
Recent research and development of THz-LED using a GaAs-based coupled multilayer cavity
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
LED総合フォーラム2018 in 徳島   12 Feb 2018   
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み
Masanobu Haraguchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Yohsuke Kinouchi, Katsuyuki Miyawaki, Akira Takahashi, Toshiya Okahisa
LED総合フォーラム2018in徳島   12 Feb 2018   
ゲルマニウムを使った高指数面基板上ガリウムヒ素系薄膜の副格子交換エピタキシー成長
吉田 啓佑, 宮井 淳平, Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
日本材料学会半導体エレクトロニクス部門委員会 平成29年度第1回講演会・見学会 (平成29年度徳島大学日亜寄附講座研究交流会)   27 Jan 2018   
テラヘルツLEDを実現するガリウムヒ素系結合共振器の室温赤外二波長レーザ発振
小楠 洸太朗, Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
日本材料学会半導体エレクトロニクス部門委員会 平成29年度第1回講演会・見学会 (平成29年度徳島大学日亜寄附講座研究交流会)   27 Jan 2018   
ウエハ接合で作製したGaAs/AlGaAs多層膜結合共振器への電流注入による室温二波長レーザ発振
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita, Takahiro Kitada
電子情報通信学会光エレクトロニクス研究会   25 Jan 2018   
Sublattice Reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Takahiro Kitada
2017 International Conference on Solid State Devices and Materials (SSDM2017)   21 Sep 2017   
Room-Temperature Two-Color Lasing by Current Injection into a GaAs/AlGaAs Coupled Multilayer Cavity Fabricated by Wafer Bonding
Takahiro Kitada, Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita
2017 International Conference on Solid State Devices and Materials (SSDM2017)   21 Sep 2017   
高指数面上の副格子交換エピタキシーと面発光テラヘルツ素子
Takahiro Kitada, Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita
第78回応用物理学会秋季学術講演会   8 Sep 2017   
Spin relaxation time anisotropy of in-plane magnetic fields in InGaAs/InAlAs multiple quantum wells
Ken Morita, Haruka Takaiwa, Kohei Kawaguchi, Takahiro Kitada, Yoshihiro Ishitani
第78回応用物理学会秋季学術講演会   8 Sep 2017   
InGaAs量子井戸をもつGaAs結合共振器からの電流注入による2波長レーザー発振
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
第78回応用物理学会秋季学術講演会   6 Sep 2017   
MBEによる(113)Bと(113)A GaAs基板上におけるGaAs/Ge/GaAsヘテロ構造の成長
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Takahiro Kitada
第78回応用物理学会秋季学術講演会   5 Sep 2017   
Sublattice reversal in GaAs/Ge/GaAs heterostructures
Xiangmeng Lu, Naoto Kumagai, Yasuo Minami, Takahiro Kitada
The 12th National Conference on Molecular Beam Epitaxy   17 Aug 2017   
InGaAs量子井戸を活性層とする結合共振器への電流注入による室温ニ波長レーザー発振
Xiangmeng Lu, Yasuo Minami, Naoto Kumagai, Ken Morita, Takahiro Kitada
2017年度応用物理・物理系学会中国四国支部合同学術講演会   29 Jul 2017   
InAs量子ドットをもつGaAs結合共振器からの電流注入によるレーザー発振
Yasuo Minami, Xiangmeng Lu, Naoto Kumagai, Ken Morita, Takahiro Kitada
2017年度応用物理・物理系学会中国四国支部合同学術講演会   29 Jul 2017   
Influence of the above-barrier illumination on spin relaxation time of InGaAs/InAlAs multiple quantum wells
Ken Morita, Haruka Takaiwa, Takahiro Kitada, Yoshihiro Ishitani
9th International School and Conference on Spintronics and Quantum Information Technology(SpinTECH )   7 Jun 2017   
Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures grown by MBE
Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
The 44rd International Symposium on Compound Semiconductor(ISCS2017)   18 May 2017   
Study of MBE Growth on high-index GaAs substrate for THz devices [Invited]
Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
2017 Xiamen University Nanqiang Youth Scholar Forum   10 Apr 2017   
(113)B GaAs基板上の副格子交換によるGaAs/AlAs多層膜結合共振器
Xiangmeng Lu, Yasuo Minami, Takahiro Kitada
2017年度 第64回応用物理学会春季学術講演会   17 Mar 2017   The Japan Society of Applied Physics
結合共振器による2波長面発光レーザーの偏光特性
Yasuo Minami, Hiroto Ota, Xiangmeng Lu, Takahiro Kitada
2017年度 第64回応用物理学会春季学術講演会   15 Mar 2017   The Japan Society of Applied Physics
Novel Terahertz Light Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity [Invited]
Takahiro Kitada, Yasuo Minami, Xiangmeng Lu
発光型/非発光型ディスプレイ合同研究会   26 Jan 2017   Institute of Electronics, Information and Communication Engineers
We have proposed planar-type and room-temperature operable terahertz light emitting devices based on a semiconductor coupled multilayer cavity that consists of two identical cavity layers and three distributed Bragg reflector (DBR) multilayers. In...
Basic Research and Development of Terahertz LED
Yasuo Minami, 太田 寛人, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
LED総合フォーラム2016   17 Dec 2016   
LEDライフイノベーション総合プラットフォーム推進事業におけるテラヘルツLED応用基盤技術に関する取り組み
Masanobu Haraguchi, Yohsuke Kinouchi, Takahiro Kitada, Masao Nagase, Takeshi Yasui, Katsuyuki Miyawaki, Akira Takahashi, Toshiya Okahisa
LED総合フォーラム2016in徳島 論文集   17 Dec 2016   LED総合フォーラム実行委員会
Current-Injection Two-Color Lasing in a Wafer-Bonded Coupled Multilayer Cavity with InGaAs Multiple Quantum Wells
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016 Internatioal Conference on Solid State Devices and Materials(SSDM2016)   29 Sep 2016   
GaAs/AlAs Triple-coupled Cavity with InAs Quantum dots for Ultrafast Wavelength Conversion Devices
Xiangmeng Lu, Hiroto Ota, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016 Internatioal Conference on Solid State Devices and Materials(SSDM2016)   28 Sep 2016   
結合共振器による二波長面発光レーザの温度依存性
太田 寛人, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016年度 第77回応用物理学会秋季学術講演会   16 Sep 2016   The Japan Society of Applied Physics
MBEによる GaAs/Ge/GaAs(113)Bヘテロ構造における副格子交換
Xiangmeng Lu, 太田 寛人, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016年度 第77回応用物理学会秋季学術講演会   15 Sep 2016   The Japan Society of Applied Physics
波長920 nm 近傍のゲート光で動作する光伝導アンテナ素子の作製
Takahiro Kitada, 太田 寛人, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
2016年度 第77回応用物理学会秋季学術講演会   14 Sep 2016   The Japan Society of Applied Physics
InGaAs/InAlAs(001)多重量子井戸中の電子スピン緩和時間の外部光照射強度依存性
高岩 悠, Ken Morita, 石谷 善博, Takahiro Kitada, Toshiro Isu
2016年度 第77回応用物理学会秋季学術講演会   14 Sep 2016   The Japan Society of Applied Physics
Two-Color Surface Emitting Lasers by a GaAs-Based Coupled Multilayer Cavity Structure for Novel Coherent Terahertz Light Sources
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
19th International Conference on Molecular Beam Epitaxy(MBE2016)   6 Sep 2016   
Effects of Sb-soak on InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates
Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
19th International Conference on Molecular Beam Epitaxy(MBE2016)   5 Sep 2016   
GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices
Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
第35回電子材料シンポジウム(EMS-35)   7 Jul 2016   The Physical Society of Japan
Two-Color Laser Based on a Wafer-Bonded Coupled Multilayer Cavity for Novel Terahertz LED
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
第35回電子材料シンポジウム(EMS-35)   6 Jul 2016   The Physical Society of Japan
GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices
Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
The 43rd International Symposium on Compound Semiconductor(ISCS2016)   27 Jun 2016   
Two-Color Lasing from a GaAs/AlGaAs Coupled Multilayer Cavity by Current Injection
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
The 43rd International Symposium on Compound Semiconductor(ISCS2016)   27 Jun 2016   
テラヘルツ帯差周波発生に適した結合共振器による二波長面発光レーザの作製
太田 寛人, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
電子情報通信学会研究会(レーザ・量子エレクトロニクス研究会LQE)   20 May 2016   Institute of Electronics, Information and Communication Engineers
超高速波長変換素子に向けたInAs量子ドットを有するGaAs/AlAs多層膜三結合共振器
Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016年 第63回応用物理学会春季学術講演会   21 Mar 2016   The Japan Society of Applied Physics
結合共振器から生じる二波長レーザー光の時間的コヒーレンスの評価
Takahiro Kitada, 太田 寛人, 原山 千穂, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
2016年 第63回応用物理学会春季学術講演会   21 Mar 2016   The Japan Society of Applied Physics
Er ドープInAs 量子ドット層のキャリア緩和時間から評価した光電流周波数特性
Naoto Kumagai, 村雲 圭佑, Xiangmeng Lu, Takahiro Kitada, Toshiro Isu
2016年 第63回応用物理学会春季学術講演会   20 Mar 2016   The Japan Society of Applied Physics
ウエハ接合により形成した結合共振器による二波長面発光レーザの特性
太田 寛人, 西村 信耶, 渡邊 健吉, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2016年 第63回応用物理学会春季学術講演会   20 Mar 2016   The Japan Society of Applied Physics
時間分解ファラデー回転法によるInGaAs/InAlAs多重量子井戸における電子g因子測定
Ken Morita, 奥村 朗人, 石谷 善博, Takahiro Kitada, Toshiro Isu
2016年 第63回応用物理学会春季学術講演会   19 Mar 2016   The Japan Society of Applied Physics
半導体多層膜結合共振器を用いた二波長面発光レーザー
太田 寛人, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
レーザー学会学術講演会第36回年次大会   11 Jan 2016   The Laser Society of Japan
テラヘルツLED
Takahiro Kitada, 太田 寛人, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
LED総合フォーラム2015   19 Dec 2015   
半導体ナノ構造による新規光デバイスの創製
Toshiro Isu, Takahiro Kitada, Naoto Kumagai, Xiangmeng Lu
徳島大学&宇都宮大学光学連携講演会2015   9 Oct 2015   
半導体多層膜結合共振器を用いた面型発光素子「テラヘルツLED」の開発
Takahiro Kitada, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
応用物理学会・テラヘルツ電磁技術研究会 第1回研究討論会/テラヘルツテクノロジーフォーラム 第1回テラテク技術セミナー   6 Oct 2015   The Japan Society of Applied Physics
Fabrication of Two-Color Surface Emitting Device of a Coupled Cavity Structure with InAs QDs Formed by Wafer-Bonding
Hiroto Ota, Chiho Harayama, Tomohisa Maekawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015 International Conference on Solid State Devices and Materials (SSDM2015)   30 Sep 2015   
Photoconductivity with 1.55 m excitation of InAs QDs embedded in InGaAs barriers on GaAs substrate
Keisuke Murakumo, Yuya Yamaoka, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015 International Conference on Solid State Devices and Materials (SSDM2015)   29 Sep 2015   
InGaAs/GaAs 多重量子井戸構造を導入した結合共振器による二波長面発光レーザの発振特性
太田 寛人, 前川 知久, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年度 第76回応用物理学会秋季学術講演会   16 Sep 2015   The Japan Society of Applied Physics
1.5・m パルス励起によるInAs 量子ドット光伝導アンテナ構造の光電流
村雲 圭佑, Naoto Kumagai, Xiangmeng Lu, Takahiro Kitada, Toshiro Isu
2015年度 第76回応用物理学会秋季学術講演会   16 Sep 2015   The Japan Society of Applied Physics
結合共振器を用いた二波長面発光レーザの発振スペクトル注入電流依存性
Naoto Kumagai, 太田 寛人, 前川 知久, Xiangmeng Lu, Takahiro Kitada, Toshiro Isu
2015年度 第76回応用物理学会秋季学術講演会   15 Sep 2015   The Japan Society of Applied Physics
(001)と(113)B GaAs 基板上に成長したInAs 量子ドットに対するSb 照射の効果
Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年度 第76回応用物理学会秋季学術講演会   14 Sep 2015   The Japan Society of Applied Physics
半導体多層薄膜結合共振器構造によるテラヘルツ発光素子
Toshiro Isu, 太田 寛人, 原山 千穂, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada
2015年電子情報通信学会ソサイエティ大会   8 Sep 2015   Institute of Electronics, Information and Communication Engineers
Enhancement of Terahertz Emission from GaAs/AlAs Coupled Multilayer Cavities by InAs Quantum Dots on (113)B-Oriented Substrates
Takahiro Kitada, Masanori Ogarane, Toshiaki Takamoto, Naoto Kumagai, Xiangmeng Lu, Ken Morita, Toshiro Isu
The Second International Symposium on Frontiers in THz Technology (FTT2015)   31 Aug 2015   
テラヘルツLEDのための二波長面発光レーザの作製
太田 寛人, Xiangmeng Lu, Takahiro Kitada, Toshiro Isu
第3回 光・ナノテクノロジー研究会 和歌山大・徳島大合同   8 Aug 2015   
テラヘルツ波検出に向けた量子ドット層の面内光伝導特性評価
Naoto Kumagai, 村雲 圭佑, Xiangmeng Lu, Takahiro Kitada, Toshiro Isu
第3回 光・ナノテクノロジー研究会 和歌山大・徳島大合同   7 Aug 2015   
ウエハ接合で形成した量子ドット結合共振器による二波長面発光素子の発光特性
太田 寛人, 原山 千穂, 前川 知久, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年度 応用物理・物理系学会 中国四国支部合同学術講演会   1 Aug 2015   The Japan Society of Applied Physics
Investigation of Carriers Thermal Transfer in Self-asssembled Quantum Dots Grown on (311)B GaAs by Temperature Dependence Photoluminescence
Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
17th International Conference on lated Semiconductor Structures(MSS17)   30 Jul 2015   
Mobility of in-plane photocurrent of stacked InAs QDs layers in strain-relaxed InGaAs matrix
Naoto Kumagai, Keisuke Murakumo, Takahiro Kitada, Toshiro Isu
17th International Conference on lated Semiconductor Structures(MSS17)   27 Jul 2015   
Temperature dependence photoluminescence of quantum dots grown on (311)B GaAs by molecular beam epitaxy
Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
第34回電子材料シンポジウム(EMS-34)   16 Jul 2015   The Physical Society of Japan
In-plane photoconductivity of InAs QDs layers embedded in strain-relaxed InGaAs barriers
Keisuke Murakumo, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
第34回電子材料シンポジウム(EMS-34)   16 Jul 2015   The Physical Society of Japan
Fabrication of Two-Color Surface Emitting Laser of a Coupled Cavity Structure Formed by Wafer-Bonding
Hiroto Ota, Chiho Harayama, Tomohisa Maekawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
第34回電子材料シンポジウム(EMS-34)   16 Jul 2015   The Physical Society of Japan
Two-color emission from coupled cavity structure including InAs QDs formed by wafer bonding
Tomohisa Maekawa, Chiho Harayama, Hiroto Ota, Takahiro Kitada, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
第34回電子材料シンポジウム(EMS-34)   16 Jul 2015   The Physical Society of Japan
Temperature Dependence Photoluminescence From InAs Quantum Dots With AlAs Cap Grown on (311)B and (100) GaAs Substrate
Xiangmeng Lu, Akihiro Kawaguchi, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
The 42th International Symposium on Compound Semiconductors (ISCS2015)   29 Jun 2015   
In-plane photoconductivity of InAs QDs embedded in strain-relaxed InGaAs layer
Keisuke Murakumo, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
The 42th International Symposium on Compound Semiconductors (ISCS2015)   29 Jun 2015   
ウエハ接合界面での光損失を低減した量子ドット結合共振器の作製
Takahiro Kitada, 原山 千穂, 太田 寛人, 前川 知久, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
2015年第62回応用物理学春季学術講演会   12 Mar 2015   The Japan Society of Applied Physics
(113)B基板上のInAs量子ドットを有するGaAs/AlAs結合共振器へのフェムト秒パルス照射によるテラヘルツ帯差周波発生 (II)
大柄根 斉宣, 高本 俊昭, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年第62回応用物理学春季学術講演会   12 Mar 2015   The Japan Society of Applied Physics
量子ドット光伝導スイッチのメサ加工による暗電流の抑制
村雲 圭佑, 山岡 裕也, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年第62回応用物理学春季学術講演会   12 Mar 2015   The Japan Society of Applied Physics
ウエハ接合で形成した量子ドット結合共振器による二波長面発光レーザ構造の作製
原山 千穂, 太田 寛人, 前川 知久, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年第62回応用物理学春季学術講演会   12 Mar 2015   The Japan Society of Applied Physics
(113)B GaAs基板上に成長した量子ドットのPLの温度依存性
Xiangmeng Lu, 川口 晃弘, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2015年第62回応用物理学春季学術講演会   11 Mar 2015   The Japan Society of Applied Physics
InAs量子ドット積層構造の面内光伝導キャリアの移動度
Naoto Kumagai, 村雲 圭佑, Takahiro Kitada, Toshiro Isu
2015年第62回応用物理学春季学術講演会   11 Mar 2015   The Japan Society of Applied Physics
結合共振器構造による二波長面発光とテラヘルツ波発光素子
原山 千穂, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
電子情報通信学会研究会(レーザ・量子エレクトロニクス研究会LQE)   30 Jan 2015   Institute of Electronics, Information and Communication Engineers
テラヘルツLED
Takahiro Kitada, 原山 千穂, Ken Morita, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
LED総合フォーラム2014-2015   10 Jan 2015   
二波長面発光レーザーによるテラヘルツ波発生
Takahiro Kitada, 原山 千穂, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
レーザー学会第472回研究会   17 Dec 2014   The Laser Society of Japan
ウエハ接合による結合共振器の作製とテラヘルツ波発生素子への応用 [Invited]
Takahiro Kitada, Toshiro Isu, Ken Morita
第5回集積光デバイス技術研究会(IPDA)   5 Dec 2014   Institute of Electronics, Information and Communication Engineers
Room temperature spin relaxation in InGaAs quantum wells
Ken Morita, Ryota Kurosawa, Tatsuya Oda, Yoshihiro Ishitani, Takahiro Kitada, Toshiro Isu
2014年 第75回応用物理学会秋季学術講演会   19 Sep 2014   The Japan Society of Applied Physics
超高速キャリア緩和InAs 量子ドット積層構造の面内光伝導
Naoto Kumagai, 村雲 圭佑, Takahiro Kitada, Toshiro Isu
2014年第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
InAs/InGaAs量子ドット積層構造の面内光伝導特性の異方性
村雲 圭佑, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
AlAsキャップ付InAs量子ドットのフォトルミネツセンスに対するInGaAs層の影響
Xiangmeng Lu, 川口 晃弘, 中河 義典, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
MBE成長とウエハ接合により作製したpn接合を含む量子ドット結合共振器
Takahiro Kitada, 原山 千穂, 太田 寛人, 前川 知久, 高田 博文, Xiangmeng Lu, Naoto Kumagai, Toshiro Isu
2014年第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
InAs 量子ドットを有するGaAs/AlAs 多層膜三結合共振器の四光波混合信号測定
大柄根 斉宣, 安長 千徳, 中河 義典, Ken Morita, Takahiro Kitada, Toshiro Isu
2014年第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
InAs量子ドットを含むGaAs/AlGaAs結合共振器の電流注入による二波長発光
原山 千穂, 上原 敏弘, 中河 義典, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年 第75回応用物理学会秋季学術講演会   18 Sep 2014   The Japan Society of Applied Physics
Effect of Cavity-Layer Thicknesses on Two-Color Lasing in a Coupled Multilayer Cavity with InAs Quantum Dots
Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014 International Conference on Solid State Devices and Materials (SSDM2014)   10 Sep 2014   
GaAs/AlAs triple-coupled cavity with InAs quantum dots for an ultrafast wavelength conversion device via the four-wave-mixing
Masanori Ogarane, Yukinori Yasunaga, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
2014 International Conference on Solid State Devices and Materials (SSDM2014)   10 Sep 2014   
Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (113)B GaAs with AlAs cap
Xiangmeng Lu, Shuzo Matsubara, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu
The 18th International Conference on Molecular Beam Epitaxy(MBE2014)   9 Sep 2014   
Terahertz Emission from a Coupled Multilayer Cavity with InAs Quantum Dots
Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu
The 18th International Conference on Molecular Beam Epitaxy(MBE2014)   9 Sep 2014   
Effects of AlAs cap and InGaAs Layer on optical property of InAs quantum dots grown on (113)B GaAs by molecular beam epitaxy
Xiangmeng Lu, 川口 晃弘, 中河 義典, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年度 応用物理・物理系学会 中国四国支部合同学術講演会   26 Jul 2014   The Japan Society of Applied Physics
量子ドット結合共振器による二波長面発光レーザ構造の作製
原山 千穂, 上原 敏弘, 中河 義典, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年度 応用物理・物理系学会 中国四国支部合同学術講演会   26 Jul 2014   The Japan Society of Applied Physics
歪柔和InGaAs層に埋め込んだErドープInAsQDsの内面光伝導特性
村雲 圭佑, Naoto Kumagai, Takahiro Kitada, Toshiro Isu
2014年度 応用物理・物理系学会 中国四国支部合同学術講演会   26 Jul 2014   The Japan Society of Applied Physics
Effect of thickness difference between two cavity layers on two-color lasing in a GaAs/AlAs coupled multilayer cavity with InAs quantum dots
Chiho Harayama, Sho Katoh, Yoshinori Nakagawa, Takahiro Kitada, Toshiro Isu
第33回電子材料シンポジウム(EMS-33)   11 Jul 2014   The Physical Society of Japan

Research Grants & Projects

 
Grants-in-Aid for Scientific Research
Project Year: Apr 2016 - Mar 2019    Investigator(s): 北田 貴弘
Grants-in-Aid for Scientific Research
Project Year: Apr 2016 - Mar 2019    Investigator(s): 熊谷 直人
Grants-in-Aid for Scientific Research
Project Year: Apr 2015 - Mar 2017    Investigator(s): Kitada Takahiro
Grants-in-Aid for Scientific Research
Project Year: Apr 2014 - Mar 2017    Investigator(s): Morita Ken
Grants-in-Aid for Scientific Research
Project Year: Aug 2014 - Mar 2016    Investigator(s): Kumagai Naoto
Grants-in-Aid for Scientific Research
Project Year: Apr 2012 - Mar 2016    Investigator(s): Isu Toshiro
Grants-in-Aid for Scientific Research
Project Year: Apr 2012 - Mar 2014    Investigator(s): ISU TOSHIRO
Grants-in-Aid for Scientific Research
Project Year: Apr 2010 - Mar 2014    Investigator(s): KITADA Takahiro
Grants-in-Aid for Scientific Research
Project Year: Apr 2010 - Mar 2012    Investigator(s): ISU Toshiro
Grants-in-Aid for Scientific Research
Project Year: Apr 2009 - Mar 2012    Investigator(s): ISU Toshiro
Grants-in-Aid for Scientific Research
Project Year: Apr 2009 - Mar 2011    Investigator(s): 北田 貴弘
Grants-in-Aid for Scientific Research
Project Year: Apr 2005 - Mar 2008    Investigator(s): SHIMOMURA Satoshi
Grants-in-Aid for Scientific Research
Project Year: Apr 2005 - Mar 2007    Investigator(s): 北田 貴弘
Grants-in-Aid for Scientific Research
Project Year: Apr 2003 - Mar 2007    Investigator(s): SHIMIZU Katsuya
Grants-in-Aid for Scientific Research
Project Year: Apr 2003 - Mar 2006    Investigator(s): HIYAMIZU Satoshi
Grants-in-Aid for Scientific Research
Project Year: Apr 2000 - Mar 2003    Investigator(s): HIYAMIAZU Satoshi
Grants-in-Aid for Scientific Research
Project Year: Apr 1997 - Mar 1999    Investigator(s): HIYAMIZU Satoshi
Study on (411)A InGaAs/InAlAs Super-Flat Interfaces
The Other Research Programs