鎌倉 良成

ホットホール注入によるトンネルゲート酸化膜の絶縁性劣化 

電気学会電子・情報・システム部門誌 121-C(3) 492-498 2001年  

Degradation of Direct-Tunneling Gate Oxide Induced by Hot-Hole Injection 

The Transactions of The Institute of Electrical Engineers of Japan 121-C(3) 492-498 2001年  

Degradation of direct-tunneling gate oxide under hot-hole injection 

Applied Physics Letters 88(10) 5802-5809 2000年  

Statistical Monte Carlo Simulation for Dielectric Breakdown of Oxide Thin Films : Effect on Non-Uniformity of Electron Trap Generation 

1999 International Conference on Simulation of Semiconductor Process and Devices 119 1999年  

Monte Carlo Simulation of Hot-Electron-Induced Dielectric Breakdown in Thin Silicon Dixide Films 

The Eleventh International Conference on Nonequilibrium Carrier Dynamics in Semiconductors 91 1999年  

A Detailed Study of Soft-and Pre-Soft・Breakdowns in Small Geometory MOS Stractures 

IEEE International Electron Devices Meeting Technical Digest 183 1999年  

Soft Breakdown in Thin Oxide Films and Its Impact on Reliability of Flash Memories 

International Symposium on Future of Intellectual Integrated Electronics 447 1999年  

Verification of Hole Scattering Rates in Si with Quantum Yield Experiment 

Extended Abstracts of 1998 Sixth International Workshop on Computational Electronics 108 1998年  

ゲート酸化膜の絶縁破壊メカニズム(共著) 

日本信頼性学会誌 19(4) 264 1997年  

MECHANISM OF DIELCTRIC BREAKDOWN IN GATE OXIDES 

THE JOURNAL OF RELIABILITY ENGINEERING ASSOCIATION OF JAPAN 19(4) 264 1997年  

Determination of Threshold Energy for Hot Electron Interface State Generation(共著) 

IEEE International Electron Devices Meeting Technical Digest 865 1996年  

A comparison of Numerical Solutions of the Boltzmann Iransport Equations for High-Energy Electron Transport in Silicon(共著) 

IEEE Transactions on Electron Devices 41(9) 1646-1654 1994年  

A Monte Carlo Simulation of Anisotropic Electron Transport in Silicon Including Full Band Structure and Anisotropic Impact-Ionization Model(共著) 

Journal of Applied Physics 75(1) 297-312 1994年