Papers

Peer-reviewed
Apr, 2008

High-quality single crystal growth and Fermi surface properties in f-electron systems

JOURNAL OF CRYSTAL GROWTH
  • Y. Onuki
  • ,
  • R. Settai
  • ,
  • H. Shishido
  • ,
  • S. Ikeda
  • ,
  • T. D. Matsuda
  • ,
  • E. Yamamoto
  • ,
  • Y. Haga
  • ,
  • D. Aoki
  • ,
  • H. Harima
  • ,
  • H. Yamagami

Volume
310
Number
7-9
First page
1859
Last page
1866
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1016/j.jcrysgro.2007.09.032
Publisher
ELSEVIER SCIENCE BV

High-quality single crystals of rare earth and actinide compounds were grown by using several kinds of techniques such as the Czochralski method, flux method, chemical transport method and Bridgman method, together with purification of a uranium ingot by the solid state electrotransport method. For these single crystals, the de Haas-van Alphen experiment was carried out to clarify the Fermi surface properties, focusing on the quasi-two-dimensional electronic state of RTX(5) (R: rare earth, T: transition metal, X: In and Ga) and AnTX(5) (An: Th, U, Np and Pu), which were compared with the results of the energy band calculation. (C) 2007 Published by Elsevier B.V.

Link information
DOI
https://doi.org/10.1016/j.jcrysgro.2007.09.032
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000255843200103&DestApp=WOS_CPL
ID information
  • DOI : 10.1016/j.jcrysgro.2007.09.032
  • ISSN : 0022-0248
  • Web of Science ID : WOS:000255843200103

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