Apr, 2008
High-quality single crystal growth and Fermi surface properties in f-electron systems
JOURNAL OF CRYSTAL GROWTH
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- Volume
- 310
- Number
- 7-9
- First page
- 1859
- Last page
- 1866
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/j.jcrysgro.2007.09.032
- Publisher
- ELSEVIER SCIENCE BV
High-quality single crystals of rare earth and actinide compounds were grown by using several kinds of techniques such as the Czochralski method, flux method, chemical transport method and Bridgman method, together with purification of a uranium ingot by the solid state electrotransport method. For these single crystals, the de Haas-van Alphen experiment was carried out to clarify the Fermi surface properties, focusing on the quasi-two-dimensional electronic state of RTX(5) (R: rare earth, T: transition metal, X: In and Ga) and AnTX(5) (An: Th, U, Np and Pu), which were compared with the results of the energy band calculation. (C) 2007 Published by Elsevier B.V.
- Link information
- ID information
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- DOI : 10.1016/j.jcrysgro.2007.09.032
- ISSN : 0022-0248
- Web of Science ID : WOS:000255843200103