Feb, 2006
Change of the electronic states in CeIn3, CeRhIn5 and CePt3Si tuned by pressure
JOURNAL OF ALLOYS AND COMPOUNDS
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- Volume
- 408
- Number
- First page
- 27
- Last page
- 32
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/j.jallcom.2005.04.101
- Publisher
- ELSEVIER SCIENCE SA
We have studied a change of the electronic states in antiferromagnets CeIn3, CeRhIn5 and CePt3Si via the de Haas-van Alphen experiments. The critical pressure P-c, where the Neel temperature becomes zero, is P-c similar or equal to 2.5 GPa in CeIn3 with the cubic crystal structure, in which the narrow pressure region superconductivity appears below a superconducting transition temperature T-sc = 0.2 K. In the pressure region P > P-c, we detected a main Fermi surface with the cyclotron mass m*(c) = 53m(0), which most likely corresponds to a nearly spherical Fermi surface in the paramagnetic state, namely a 4f-itinerant Fermi surface. The Fermi surface in the antiferromagnet CeRhIn5 with the tetragonal crystal structure is similar to that of LaRhIn5, consisting of two kinds of nearly cylindrical Fermi surfaces. We observed a drastic change of the Fermi surface from 4f-localized (LaRhIn5) to 4f-itinerant (CeCoIn5) Fermi surfaces at P-c similar or equal to 2.4 GPa. The cyclotron mass increases intensively above 1.6 GPa where superconductivity sets in. CePt3 Si with the tetragonal crystal structure without inversion symmetry is highly different from CeIn3 and CeRhIn5 in magnetism and superconductivity. It orders antiferromagnetically below T-N = 2.3 K and becomes superconductive below T-sc = 0.6 K at ambient pressure. With increasing pressure, the cyclotron mass is found to be reduced, together with a steep decrease of T-N and Tsc, where P-c is most likely about 1.5 GPa in CePt3Si. The heavy fermion state Of CePt3Si is realized at ambient pressure. (c) 2005 Elsevier B.V. All rights reserved.
- Link information
- ID information
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- DOI : 10.1016/j.jallcom.2005.04.101
- ISSN : 0925-8388
- eISSN : 1873-4669
- Web of Science ID : WOS:000235445300006