2004年5月
High-quality single crystal growth of UGe2 and URhGe
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
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- 巻
- 272
- 号
- 開始ページ
- E171
- 終了ページ
- E172
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.jmmm.2003.12.1083
- 出版者・発行元
- ELSEVIER SCIENCE BV
We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe2 and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe2 and 41 for URhGe. (C) 2003 Published by Elsevier B.V.
- リンク情報
- ID情報
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- DOI : 10.1016/j.jmmm.2003.12.1083
- ISSN : 0304-8853
- eISSN : 1873-4766
- Web of Science ID : WOS:000202897200076