2011年12月
Pressure and Temperature Dependences of the Electronic Structure of CeIrSi3 Probed by Resonant X-ray Emission Spectroscopy
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- 巻
- 80
- 号
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JPSJ.80.124701
- 出版者・発行元
- PHYSICAL SOC JAPAN
Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce L-3 edge. Ce is in a weakly mixed valence state at ambient pressure, mostly f(1) with a small contribution from the f(0) component. Pressure-induced increase of the Ce valence becomes apparent above 4 GPa, concomitantly with the disappearance of the superconductivity. No temperature dependence of the Ce valence is observed within the measured temperature range down to 24 K.
- リンク情報
- ID情報
-
- DOI : 10.1143/JPSJ.80.124701
- ISSN : 0031-9015
- Web of Science ID : WOS:000297626400021