2011年8月
High Field Magnetoresistance and de Haas-van Alphen Effect in LaRu2Al10
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
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- 巻
- 80
- 号
- 8
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JPSJ.80.084716
- 出版者・発行元
- PHYSICAL SOC JAPAN
We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in LaRu2Al10, which is a reference compound of CeRu2Al10 that exhibits an unusual transition at T-0 similar or equal to 27 K. The magnetoresistance increases with increasing magnetic field at low temperatures in the wide field directions, suggesting that LaRu2Al10 is a compensated metal without an open orbit. From the dHvA experiments, about three dHvA frequency branches whose cyclotron effective masses are close to 1m(0) (m(0): rest mass of an electron) were detected. The observed dHvA branches for the main Fermi surface are well explained by the results of band structure calculation based on a full potential linearized augmented-plane-wave (FLAPW) method and local-density approximation (LDA), that demonstrates the multiply connected Fermi surface with no nesting property in LaRu2Al10.
- リンク情報
- ID情報
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- DOI : 10.1143/JPSJ.80.084716
- ISSN : 0031-9015
- Web of Science ID : WOS:000293836400041