2003年7月
High-quality single crystal growth and the Fermi surface property of uranium and cerium compounds
JOURNAL OF PHYSICS-CONDENSED MATTER
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- 巻
- 15
- 号
- 28
- 開始ページ
- S1903
- 終了ページ
- S1909
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/0953-8984/15/28/301
- 出版者・発行元
- IOP PUBLISHING LTD
We present descriptions of the single crystal growth of uranium and cerium compounds via the Czochralski-pulling, self-flux and vapour transport methods. We also report the results of de Haas-van Alphen experiments and energy band calculations for a Hill-plot rule of UX3 (X: Si, Ge, Sn and Pb), heavy fermion systems of UPt3 and UPd2Al3, quasi-two-dimensional electronic states of UPtGa5, UX2 (X: Bi, Sb, As, P) and CeCoIn5, characteristic semimetals of UC and CeAgSb2, and quantum critical phenomena in UGe2 and CeRh2Si2.
- リンク情報
- ID情報
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- DOI : 10.1088/0953-8984/15/28/301
- ISSN : 0953-8984
- eISSN : 1361-648X
- Web of Science ID : WOS:000184563300003