2010年9月
Reduction in surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water-vapor annealing
APPLIED PHYSICS LETTERS
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- 巻
- 97
- 号
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.3489419
- 出版者・発行元
- AMER INST PHYSICS
We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of similar to 6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of similar to 0.4. The estimated SRV is as low as 2.1x10(3) cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489419]
- リンク情報
- ID情報
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- DOI : 10.1063/1.3489419
- ISSN : 0003-6951
- Web of Science ID : WOS:000282124700011