2017年5月
Demonstration of a mid-wavelength infrared narrowband thermal emitter based on GaN/AlGaN quantum wells and a photonic crystal
APPLIED PHYSICS LETTERS
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- ,
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- 巻
- 110
- 号
- 18
- 開始ページ
- 181109
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4983020
- 出版者・発行元
- AMER INST PHYSICS
We experimentally demonstrate a thermal emitter with a narrow-bandwidth and low background emission, operating in the mid-wavelength infrared (MWIR) range, based on a combination of inter-subband transitions in GaN/AlGaN multiple quantum wells and optical resonance in a photonic crystal slab. The fabricated device exhibits single-peak narrowband thermal emission with a Q factor of 93 at a wavelength of 4.0 mu m. Stable operation at high temperatures over 700 degrees C has been demonstrated owing to the good thermal stability of GaN/AlGaN, which enables the generation of strong peak emission intensity as high as 93 mW/lm/sr/cm(2). Such a narrow-band and low-background emitter in the MWIR range has been difficult to realize by metal or heavily doped semiconductor-based emitters due to the broadband emission characteristics of the materials and by GaAs/AlGaAsbased emitters due to the thermal instability of the materials. Our device can be applied to various MWIR applications including CO2 and NOx gas sensing systems.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4983020
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000400931900009