論文

査読有り
1991年

Fabrication and Characteristics of Al<inf>x</inf>Ga<inf>1-x</inf> as Heterojunction Phototransistors with Wide-Gap Window

IEEE Transactions on Electron Devices
  • Yu Zhu
  • ,
  • Yoshihiko Komatsu
  • ,
  • Susumu Noda
  • ,
  • Yoshikazu Takeda
  • ,
  • Akio Sasaki

38
6
開始ページ
1310
終了ページ
1315
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/16.81656

The fabrication process and device characteristics of Al&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
7&lt
/inf&gt
Ga&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
3&lt
/inf&gt
As/Al&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
2&lt
/inf&gt
Ga&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
8&lt
/inf&gt
As heterojunction phototransistors are described. The interface between the emitter and base layers becomes rough with the increase in Al content of the emitter layer, and it causes a decrease in optical conversion gain of the heterojunction phototransistors. A spacer layer with the same Al content as that in the emitter layer is inserted between the emitter and base layers. Both the interface morphology and the optical conversion gain are improved. Enhanced by the avalanche multiplication in the base-collector junction, an optical conversion gain of 1500 is achieved in spite of the shorter diffusion length in the Al&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
2&lt
/inf&gt
Ga&lt
inf&gt
0&lt
/inf&gt
.&lt
inf&gt
8&lt
/inf&gt
As base layer. The device exhibits photoresponse in the range of 520–780 nm, i.e., from green to red light. © 1991 IEEE

リンク情報
DOI
https://doi.org/10.1109/16.81656
ID情報
  • DOI : 10.1109/16.81656
  • ISSN : 1557-9646
  • ISSN : 0018-9383
  • SCOPUS ID : 0026170149

エクスポート
BibTeX RIS