須田淳 (Jun Suda) - マイポータル

基本情報

所属: 京都大学大学院工学研究科電子工学専攻准教授

学位: 博士(工学)(京都大学)

J-GLOBAL ID: 200901033798392399
researchmap会員ID: 1000221116

外部リンク: http://www.kuee.kyoto-u.ac.jp/~suda/

研究キーワード

研究分野

学歴

受賞

2003年

第33回結晶成長国内会議日本結晶成長学会講演奨励賞
1998年

第5回応用物理学会講演奨励賞

論文

191

Investigation of anharmonicity in rotational phonon mode for BaWO4 crystal

Jun Suda

VIBRATIONAL SPECTROSCOPY 72 33-36 2014年5月査読有り
4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (11(2)over-bar0)

Masahiro Horita, Masato Noborio, Tsunenobu Kimoto, Jun Suda

IEEE ELECTRON DEVICE LETTERS 35(3) 339-341 2014年3月査読有り
Investigation of the phonon band gap effect on Raman-active optical phonons in SrMoO4 crystal

Jun Suda, Petr G. Zverev

VIBRATIONAL SPECTROSCOPY 71 6-11 2014年3月査読有り
Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging

Chihiro Kawahara, Jun Suda, Tsunenobu Kimoto

JAPANESE JOURNAL OF APPLIED PHYSICS 53(2) 2014年2月査読有り
Etching-limiting process and origin of loading effects in silicon etching with hydrogen chloride gas

Naoya Morioka, Jun Suda, Tsunenobu Kimoto

JAPANESE JOURNAL OF APPLIED PHYSICS 53(1) 2014年1月査読有り
Negative- U carbon vacancy in 4 H -SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, N. T. Son

Physical Review B - Condensed Matter and Materials Physics 88(23) 2013年12月26日査読有り
Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates

Hiroki Miyake, Koichi Amari, Tsunenobu Kimoto, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS 52(12) 2013年12月査読有り
Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation

Takafumi Okuda, Tsunenobu Kimoto, Jun Suda

Applied Physics Express 6(12) 2013年12月査読有り
AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter

Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

IEEE TRANSACTIONS ON ELECTRON DEVICES 60(9) 2768-2775 2013年9月査読有り
Single-crystalline 4H-SiC micro cantilevers with a high quality factor

Kohei Adachi, Naoki Watanabe, Hajime Okamoto, Hiroshi Yamaguchi, Tsunenobu Kimoto, Jun Suda

SENSORS AND ACTUATORS A-PHYSICAL 197 122-125 2013年8月査読有り
Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS 52(8) 2013年8月査読有り
Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime

Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto

JAPANESE JOURNAL OF APPLIED PHYSICS 52(7) 2013年7月査読有り
Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)

Mitsuaki Kaneko, Hironori Okumura, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, Tsunenobu Kimoto, Jun Suda

APPLIED PHYSICS EXPRESS 6(6) 2013年6月査読有り
Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto

APPLIED PHYSICS EXPRESS 6(5) 2013年5月査読有り
Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Koutarou Kawahara, Xuan Thang Trinh, Nguyen Tien Son, Erik Janzen, Jun Suda, Tsunenobu Kimoto

APPLIED PHYSICS LETTERS 102(11) 2013年3月査読有り
Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

Yuichiro Nanen, Muneharu Kato, Jun Suda, Tsunenobu Kimoto

IEEE TRANSACTIONS ON ELECTRON DEVICES 60(3) 1260-1262 2013年3月査読有り
Orientation and Shape Effects on Ballistic Transport Properties in Gate-All-Around Rectangular Germanium Nanowire nFETs

Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto

IEEE TRANSACTIONS ON ELECTRON DEVICES 60(3) 944-950 2013年3月査読有り
Deep levels generated by thermal oxidation in p-type 4H-SiC

Koutarou Kawahara, Jun Suda, Tsunenobu Kimoto

JOURNAL OF APPLIED PHYSICS 113(3) 2013年1月査読有り
Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals

Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

JAPANESE JOURNAL OF APPLIED PHYSICS 52(1) 2013年1月査読有り
Size and geometric effects on conduction band structure of GaAs nanowires

Hajime Tanaka, Naoya Morioka, Seigo Mori, Jun Suda, Tsunenobu Kimoto

IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai 118-119 2013年査読有り

もっとみる

MISC

CT-2-3 SiCパワーデバイス技術(CT-2.ワイドギャップ半導体パワーデバイスの現状と展望,チュートリアルセッション,ソサイエティ企画)

須田淳, 木本恒暢

電子情報通信学会総合大会講演論文集 2012(2) "SS-22"-"SS-24" 2012年3月6日
Orientation and size effects on ballistic electron transport properties in gate-all-around rectangular germanium nanowire FETs

Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto

2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 2012年査読有り
Breakdown Characteristics of 12-20 kV-class 4H-SiC PiN Diodes with Improved Junction Termination Structures

Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 381-384 2012年査読有り
Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching

Naoki Watanabe, Tsunenobu Kimoto, Jun Suda

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI 7926 2011年査読有り
Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications

Naoki Watanabe, Tsunenobu Kimoto, Jun Suda

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI 7926 2011年査読有り
Fabrication of Electrostatic-actuated Single-crystalline 4H-SiC Bridge Structures by Photoelectrochemical Etching

Naoki Watanabe, Tsunenobu Kimoto, Jun Suda

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI 7926 2011年査読有り
Thermo-optic Coefficients of SiC, GaN, and AlN up to 512 degrees C from Infrared to Ultraviolet Region for Tunable Filter Applications

Naoki Watanabe, Tsunenobu Kimoto, Jun Suda

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY XVI 7926 2011年査読有り
4H-SiC Bipolar Junction Transistors with Record Current Gains of 257 on (0001) and 335 on (000-1)

Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 292-295 2011年査読有り
ＭＯＳＦＥＴのしきい値電圧および理論計算から求めた〈１００〉Ｓｉナノワイヤのバンドギャップ

吉岡裕典, 森岡直也, 須田淳, 木本恒暢

電子情報通信学会技術研究報告 110(351(SDM2010 185-203)) 1-6 2010年12月10日
III族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス

須田淳, 三宅裕樹, 木本垣暢

表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan 31(12) 651-656 2010年12月10日査読有り
光電気化学エッチングにより作製した静電駆動単結晶ＳｉＣブリッジ構造

渡辺直樹, 木本恒暢, 須田淳

電気学会マイクロマシン・センサシステム研究会資料 MSS-10(1-6.8-16.18-30) 5-8 2010年6月17日
<教室通信> エレクトロニクス・サマーキャンプ開催報告

須田淳, 蛯原義雄, 山末耕平, 佐藤宣夫

Cue : 京都大学電気関係教室技術情報誌 23 64-64 2010年3月
Non-destructive detection and visualization of extended defects in 4H-SiC epilayers

G. Feng, J. Suda, T. Kimoto

Materials Research Society Symposium Proceedings 1246 37-42 2010年査読有り
Investigation of phonon band gap, heat capacity and Raman active phonons in BaWO₄ crystal

J. Suda, P.G. Zverev

AIP Conference Proceedings 1267 1150-1151 2010年査読有り
Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires

Naoya Moriokaa, Hironori Yoshioka, Jun Suda, Tsunenobu Kimoto

2010 Silicon Nanoelectronics Workshop, SNW 2010 2010年査読有り
Demonstration of SiC heterojunction bipolar transistors with AlN/GaN short-period superlattice widegap emitter

Hiroki Miyake, Tsunenobu Kimoto, Jun Suda

Device Research Conference - Conference Digest, DRC 281-282 2009年12月11日査読有り
Anharmonicity on Raman active phonon modes of LaAlO3

J. Suda, O. Kamishima, J. Kawamura, T. Hattori, T. Sato

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PT 5A 150(5a) 2009年査読有り
Strong Anharmonicity and Lattice Dynamics in LiTaO3 by Raman Spectroscopy

J. Suda, O. Kamishima, J. Kawamura, T. Hattori

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PT 5A 150(5a) 2009年査読有り
Fabrication and electronic characteristics of silicon nanowire mosfets

H. Yoshioka, Y. Nanen, J. Suda, T. Kimoto

Materials Research Society Symposium Proceedings 1080 90-95 2008年査読有り
Temperature dependence of electrical properties of NiO thin films for resistive random access memory

R. Suzuki, J. Suda, T. Kimoto

Materials Research Society Symposium Proceedings 1071 69-74 2008年査読有り

須田淳

基本情報

研究キーワード

研究分野

学歴

受賞

論文

MISC

所属学協会

Works(作品等)

共同研究・競争的資金等の研究課題

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