論文

査読有り
2002年7月

Growth activation of ZnO layers with H2O vapor on a-face of sapphire substrate by metalorganic molecular-beam epitaxy

Physica Status Solidi (A) Applied Research
  • A. B M A Ashrafi
  • ,
  • I. Suemune
  • ,
  • H. Kumano
  • ,
  • K. Uesugi

192
1
開始ページ
224
終了ページ
229
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#

H2O vapor-activated ZnO layers have been grown on the a-face of sapphire substrates. The grown ZnO layers revealed a crystalline orientation of c-face ZnO ∥ a-face sapphire. For the II/VI flux ratio of 14, the ZnO layers showed a bandedge luminescence with the emission energy of 3.376 and 3.304 eV at 17 K and room temperature, respectively. The amount of the blue-shifted energy in the Zn-rich ZnO is estimated to be ∼30 meV in comparison to the donor-bound exciton emission reported previously. The energy shifting towards the higher level could be attributed to the drastic reduction of carrier concentration in the order of ∼1017 cm-3 for the II/VI flux ratio of 14. With this growth condition, electron mobility is recorded typically to be ∼90 cm2/Vs which is considerably higher for the same carrier concentrations reported previously with plasma as oxygen source.

リンク情報
DOI
https://doi.org/10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#
URL
http://orcid.org/0000-0002-2153-2722
ID情報
  • DOI : 10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#
  • ISSN : 0031-8965
  • SCOPUS ID : 0036654497

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