2002年7月
Growth activation of ZnO layers with H2O vapor on a-face of sapphire substrate by metalorganic molecular-beam epitaxy
Physica Status Solidi (A) Applied Research
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- ,
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- 巻
- 192
- 号
- 1
- 開始ページ
- 224
- 終了ページ
- 229
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#
H2O vapor-activated ZnO layers have been grown on the a-face of sapphire substrates. The grown ZnO layers revealed a crystalline orientation of c-face ZnO ∥ a-face sapphire. For the II/VI flux ratio of 14, the ZnO layers showed a bandedge luminescence with the emission energy of 3.376 and 3.304 eV at 17 K and room temperature, respectively. The amount of the blue-shifted energy in the Zn-rich ZnO is estimated to be ∼30 meV in comparison to the donor-bound exciton emission reported previously. The energy shifting towards the higher level could be attributed to the drastic reduction of carrier concentration in the order of ∼1017 cm-3 for the II/VI flux ratio of 14. With this growth condition, electron mobility is recorded typically to be ∼90 cm2/Vs which is considerably higher for the same carrier concentrations reported previously with plasma as oxygen source.
- リンク情報
- ID情報
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- DOI : 10.1002/1521-396X(200207)192:1<224::AID-PSSA224>3.0.CO;2-#
- ISSN : 0031-8965
- SCOPUS ID : 0036654497