2011年10月
Enhanced Photon Generation in a Nb/n - InGaAs/p - InP Superconductor/Semiconductor-Diode Light Emitting Device
PHYSICAL REVIEW LETTERS
- 巻
- 107
- 号
- 15
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevLett.107.157403
- 出版者・発行元
- AMER PHYSICAL SOC
We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
- リンク情報
- ID情報
-
- DOI : 10.1103/PhysRevLett.107.157403
- ISSN : 0031-9007
- eISSN : 1079-7114
- Web of Science ID : WOS:000296288500012