論文

査読有り
2011年10月

Enhanced Photon Generation in a Nb/n - InGaAs/p - InP Superconductor/Semiconductor-Diode Light Emitting Device

PHYSICAL REVIEW LETTERS
  • H. Sasakura
  • S. Kuramitsu
  • Y. Hayashi
  • K. Tanaka
  • T. Akazaki
  • E. Hanamura
  • R. Inoue
  • H. Takayanagi
  • Y. Asano
  • C. Hermannstaedter
  • H. Kumano
  • I. Suemune
  • 全て表示

107
15
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1103/PhysRevLett.107.157403
出版者・発行元
AMER PHYSICAL SOC

We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.

リンク情報
DOI
https://doi.org/10.1103/PhysRevLett.107.157403
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000296288500012&DestApp=WOS_CPL
URL
http://orcid.org/0000-0002-2153-2722
ID情報
  • DOI : 10.1103/PhysRevLett.107.157403
  • ISSN : 0031-9007
  • eISSN : 1079-7114
  • Web of Science ID : WOS:000296288500012

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