2013年2月
Spectral and Transient Luminescence Measurements on GaSb/AlGaSb Quantum Wells Grown on GaSb/GaAs Heterojunctions with and without Interfacial Misfit Arrays
JAPANESE JOURNAL OF APPLIED PHYSICS
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- 巻
- 52
- 号
- 2
- 開始ページ
- 022101-1
- 終了ページ
- 7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.52.022101
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
Growth of 90 degrees interfacial-misfit-dislocation (IMF) array at heterointerfaces offers low dislocation densities in highly mismatched heterostructures such as GaSb/GaAs. We investigated time-integrated and time-resolved photoluminescence (PL) properties of a GaSb/AlGaSb quantum well (QW) structure grown on (001) GaAs substrate with and without IMF array at the GaSb-buffer/GaAs interface. Our observation reveals that the low-temperature PL from the QW with IMF is twice more intense than that of the QW without IMF, indicating higher quantum efficiency with IMF. The QW with IMF also exhibited the band filling effect at higher excitation power revealed from the spectrally resolved PL decay measurements. These results are the indication of subdued dislocation density with the IMF growth mode. Our PL measurement results along with supportive band-structure calculation of the GaSb/AlGaSb QW show that the luminescence efficiency of the present QW structure is limited by the hole leakage at elevated temperature. Therefore the IMF effect will be more clearly demonstrated by replacing the heterostructure with the one with higher band-offsets. (C) 2013 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/JJAP.52.022101
- ISSN : 0021-4922
- Web of Science ID : WOS:000314466800014