2002年2月28日
Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
Japanese journal of applied physics. Pt. 1, Regular papers & short notes
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- 巻
- 41
- 号
- 2
- 開始ページ
- 1030
- 終了ページ
- 1033
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.41.1030
- 出版者・発行元
- 社団法人応用物理学会
Erbium (Er) doping in GaNP during growth by metalorganic molecular-beam epitaxy was studied. Nitrogen (N) doping in GaP was possible up to ${\sim}\,2$% and exhibited large band-gap bowing consistent with previous reports. Er was doped in GaNP to study the codoping effect of Er and N. Er concentration was estimated to be about 0.2–0.8 at.% depending on the Er Knudsen cell temperature. Er doping in GaNP resulted in photoluminescence (PL) spectra similar to that of GaP in the visible-wavelength region, but the PL subpeaks at energies near the longitudinal-optical-phonon replica observed in GaP exhibited variations with Er doping. Although no sharp Er emissions originating from the 4f-4f inner-shell transitions were observed with the codoping, intense wide-band infrared (IR) luminescence covering the wavelength range from 1.1 to 1.6 $\mu$m was observed with the codoping of Er and N. The IR luminescence was linearly increased for the higher excitations, while the corresponding IR-PL intensity in undoped GaNP was weak and easily saturated.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.41.1030
- ISSN : 0021-4922
- CiNii Articles ID : 110006340886
- CiNii Books ID : AA10457675