論文

2002年2月28日

Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP

Japanese journal of applied physics. Pt. 1, Regular papers & short notes
  • Suemune Ikuo
  • ,
  • Shimozawa Togo
  • ,
  • Uesugi Katsuhiro
  • ,
  • Kumano Hidekazu
  • ,
  • Machida Hideaki
  • ,
  • Shimoyama Norio

41
2
開始ページ
1030
終了ページ
1033
記述言語
英語
掲載種別
DOI
10.1143/JJAP.41.1030
出版者・発行元
社団法人応用物理学会

Erbium (Er) doping in GaNP during growth by metalorganic molecular-beam epitaxy was studied. Nitrogen (N) doping in GaP was possible up to ${\sim}\,2$% and exhibited large band-gap bowing consistent with previous reports. Er was doped in GaNP to study the codoping effect of Er and N. Er concentration was estimated to be about 0.2–0.8 at.% depending on the Er Knudsen cell temperature. Er doping in GaNP resulted in photoluminescence (PL) spectra similar to that of GaP in the visible-wavelength region, but the PL subpeaks at energies near the longitudinal-optical-phonon replica observed in GaP exhibited variations with Er doping. Although no sharp Er emissions originating from the 4f-4f inner-shell transitions were observed with the codoping, intense wide-band infrared (IR) luminescence covering the wavelength range from 1.1 to 1.6 $\mu$m was observed with the codoping of Er and N. The IR luminescence was linearly increased for the higher excitations, while the corresponding IR-PL intensity in undoped GaNP was weak and easily saturated.

リンク情報
DOI
https://doi.org/10.1143/JJAP.41.1030
CiNii Articles
http://ci.nii.ac.jp/naid/110006340886
CiNii Books
http://ci.nii.ac.jp/ncid/AA10457675
URL
http://id.ndl.go.jp/bib/6098713
URL
https://jlc.jst.go.jp/DN/JALC/00156583013?from=CiNii
ID情報
  • DOI : 10.1143/JJAP.41.1030
  • ISSN : 0021-4922
  • CiNii Articles ID : 110006340886
  • CiNii Books ID : AA10457675

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