2011年3月21日
Localized edge states in two-dimensional topological insulators: Ultrathin Bi films
Physical Review B - Condensed Matter and Materials Physics
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- ,
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- 巻
- 83
- 号
- 12
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.83.121310
We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well. © 2011 American Physical Society.
- ID情報
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- DOI : 10.1103/PhysRevB.83.121310
- ISSN : 1098-0121
- ISSN : 1550-235X
- SCOPUS ID : 79961074112