野々垣陽一 (Youichi Nonogaki) - マイポータル - researchmap

基本情報

所属: 旧所属自然科学研究機構分子科学研究所極端紫外光科学研究系岡崎国立共同研究機構 (分子科学研究所) 極端紫外光科学研究系助手

学位: 博士(工学)(名古屋大学)

J-GLOBAL ID: 200901091481980589
researchmap会員ID: 1000231107

研究キーワード

2

研究分野

2

MISC

20

Nanostructure formation on Si (111) surface assisted by synchrotron radiation illumination - Characterization by scanning tunneling microscopy

Y Nonogaki, Y Gao, H Mekaru, T Miyamae, T Urisu

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 119(2-3) 241-246 2001年8月
SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication

Y Nonogaki, H Hatate, R Oga, S Yamamoto, Y Fujiwara, Y Takeda, H Noda, T Urisu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 74(1-3) 7-11 2000年5月
Er-related luminescence from self-assembled InAs quantum dots doped with Er by organometallic vapor-phase epitaxy

Y Fujiwara, T Kawamoto, S Fuchi, M Ichida, Y Nonogaki, A Nakamura, Y Takeda

JOURNAL OF LUMINESCENCE 87-9 326-329 2000年5月
Growth mode transition of InGaAs in OMVPE grouth on GaP (001)(共著)

Microelectronic Engineering 51-52 35 2000年
Effects of GaP cap layor growth on self-assembled InAs-islands grown on GaP (001) by organometallic vapor phase epitaxy (共著)

Shingo Fuchi, Youichi Nonogaki, Hiromitsu Moriya, Yasufumi Fujiwara, Yoshikazu Takeda

Jpn. J. Appl. Phys. 39(6A) 3290-3293 2000年
Effects of vicinal InP (001) surface on InAs dots grown by droplet hetero-epitaxy

Y Nonogaki, T Iguchi, S Fuchi, Y Fujiwara, Y Takeda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 58(3) 195-198 1999年3月
Hot carrier relaxation dynamics in In_0.53Ga_0.47 As studied by femtosecond pump-probe spectroscopy (共著)

Journal of Luminescence 83/84 49-53 1999年
Formation of InGaAs dots on IaP substrate with lattice-matching condition by droplet heteroepitary

Inst. Phys. Conf. Ser. 162 469-473 1999年
Optically detected far-infrared magnets absorption in InGaAs (共著)

Hiroyasu Nakata, Nobuhiro Shimizu, Tyuzi Ohyama, Youichi Nonogaki, Yasufumi Fujiwara, Yoshikazu Takeda

Jpn. J. Appl. Phys. 38(4A) 1868-1871 1999年
Ultrahigh-vacuum reaction apparatus to study synchrotron-radiation-stimulated processes

S Hirano, A Yoshigoe, M Nagasono, K Mase, J Ohara, Y Nonogaki, Y Takeda, T Urisu

JOURNAL OF SYNCHROTRON RADIATION 5 1363-1368 1998年11月
InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE

Y Nonogaki, T Iguchi, S Fuchi, Y Fujiwara, Y Takeda

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 51(1-3) 118-121 1998年2月
Interse 1.5μm emission from InAs quantum dots on exact and vicinal (001)InP surface grown by droplet hetero-epitoxy using OMVPE

Meterials Science & Enginerig B (57) 84-86 1998年
Nanometer-scale InAs islands grown of GaP(001) by organometallic vapor phase epitoxy

Applied Surface Science 130/132 724-728 1998年
Dynamical properties of excitons interacting with electrons heated by for-infrared cyclotron resonance in InGa As (共著)

Physica B 246/247 204-207 1998年
Effects of post annealing on self-organized InAs islands grown on (001) GaP by organometallic vapor phase epitaxy (共著)

Journal of Surface Analysis 4 259-263 1998年
Formation of InAs islands on InP(001) by droplet hetero-epitoxy

Applied Surface Science. 117/118 665-669 1997年
Erbium δ-doping to InP by OMVPE (共著)

Institute of Physics Conference Series 145 149-154 1996年
Interfacial layer in homoepitaxial InP grown by organometalic vapor phase epitaxy with TMIn and TBP(共著)

Journal of Electronic Material (25) 611-617 1996年
Erbiumdoping to P-based (]G0003[)-(]G0005[) semiconductors by OMVPE with TBP as a non-toxic P source (共著)

Materials Science Forum 196-201 621-625 1995年
Drastic effects of hydrogen flow rate on Growth characterutics and electrical/optical properties of InP grown by organometallic vapor phase epitoxy with TMIn and TBP(共著)

Journal of Crystal Growth 146(1/4) 544-548 1995年

共同研究・競争的資金等の研究課題

4