丹呉 浩侑

低温poly-Si TFTのホットキャリア効果による相互コンダクタンス及びしきい値電圧の変化－LDD構造、及びSD構造TFTの比較－ 

電子情報通信学会論文誌 J85-C(8/684-691) 2002年  

Het-carrier Effects and Gate Currents of Low -temeerature Paly-Si TFTs for Liquid Chystal Displays 

Digest of Technical Papers AM-LCD 2000 (TFTp3-4) 185-188 2000年  

Suppression of the Floating-Bady Effect in SOI MOSFET's by the Bandgap Enginnering Method Using a Si_1-xGe_x Source Structure. (共著) 

IEEE Transaction on Electron Devices 44(3) 423-430 1997年  

On the universarity of invbsion mobility in Si MOSFET's, part2-Effects of Sunface Orientation(共著) 

IEEE Transaction on Electron Devices 41 2362-2368 1994年  

On the universarity of inversion mobility in Si MOSFETs, part-1-Effects of Substrate Impurity Concentration(共著) 

IEEE Transaction on Electron Devices 41(12) 2357-2362 1994年  

Electrical Properties and technological perspectives of thim-film SOI MOSFET's(共著) 

Transaction on Institute on Electronics, Imformation and Communication Engineers of Japan E74 337-351 1991年  

Application of E-beam Recrystallszation to three-layer image processor fabrication(共著) 

IEEE Transaction on Electron Devices 38(1) 47-54 1991年  

Two dimensional simulation and measurement of high-performance MOSFET's made on a very thim SOI films(共著) 

IEEE Transaction on Electron Devices 36(3) 493-503 1989年  

Highly controllable pseudoline electron beam recry sallization of Silicon on insulator(共著) 

Journal of Applied Physics 59(8) 2971-2976 1986年  

A7000-gate microprocessor on SOS-PULCE-(共著) 

IEEE Tronsaction on Electron Devies 26(4) 588-595 1979年  

4-μm LSI on SOS using coplanor process(共著) 

IEEE Transaction on Electron Devices ED-25 945-951 1978年  

Potential, field and carvier distribution in the chamel of Junction Field-Effect Tronsistor(共著) 

Solid-State Electronics 13 139-152 1970年