2003年
Structure and electrical properties of pulsed laser deposited amorphous carbon nitride thin films
SURFACE ENGINEERING 2002-SYNTHESIS, CHARACTERIZATION AND APPLICATIONS
- ,
- ,
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- 巻
- 750
- 号
- 開始ページ
- 285
- 終了ページ
- 290
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1557/PROC-750-Y5.1
- 出版者・発行元
- MATERIALS RESEARCH SOCIETY
Amorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N-2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between a electron localized states.
- リンク情報
- ID情報
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- DOI : 10.1557/PROC-750-Y5.1
- ISSN : 0272-9172
- Web of Science ID : WOS:000183595500045