論文

査読有り
2019年1月4日

Resistive open defect detection in SoCs by a test method based on injected charge volume after test input application

2018 IEEE CPMT Symposium Japan, ICSJ 2018
  • Yuta Matsumoto
  • ,
  • Masaki Hashizume
  • ,
  • Hiroyuki Yotsuyanagi
  • ,
  • Shyue Kung Lu

開始ページ
141
終了ページ
142
記述言語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/ICSJ.2018.8602818

© 2018 IEEE. A test method is proposed of resistive open defects in an SoC by means of charge volume injected from the VDD terminal. The charge is injected after providing a test input vector from a charge injector instead of a DC power voltage source. It is shown by Spice simulation that a resistive open defect in four parallel inverter chain circuits of 30 stages whose resistance is larger than 10k Ω can be detected by the test method.

リンク情報
DOI
https://doi.org/10.1109/ICSJ.2018.8602818
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85061740936&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85061740936&origin=inward
ID情報
  • DOI : 10.1109/ICSJ.2018.8602818
  • SCOPUS ID : 85061740936

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