MISC

2012年

Hall effect in single crystal CeCu2Si2 under high pressure

INTERNATIONAL CONFERENCE ON STRONGLY CORRELATED ELECTRON SYSTEMS (SCES 2011)
  • S. Araki
  • ,
  • Y. Shiroyama
  • ,
  • T. Shinohara
  • ,
  • Y. Ito
  • ,
  • Y. Ikeda
  • ,
  • T. C. Kobayashi
  • ,
  • S. Seiro
  • ,
  • C. Geibel
  • ,
  • F. Steglich

391
開始ページ
012005
終了ページ
記述言語
英語
掲載種別
DOI
10.1088/1742-6596/391/1/012005
出版者・発行元
IOP PUBLISHING LTD

Hall effect measurements were carried out under high pressures up to 4.9 GPa in a single crystal of CeCu2Si2. The temperature dependence of the Hall coefficient is interpreted to be composed of two peaks below room temperature. The high-temperature peak shows strong pressure dependence, where the peak shifts from 20 K at ambient pressure to 125 K at 4.9 GPa. This peak is a consequence of the anomalous Hall effect due to skew scattering. The low-temperature peak shifts from 5 K at ambient pressure to 15 K at 4.9 GPa and the magnitude of the peak shows the maximum around 4.1 GPa at which the superconducting transition temperature also reaches the maximum.

Web of Science ® 被引用回数 : 1

リンク情報
DOI
https://doi.org/10.1088/1742-6596/391/1/012005
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000314761400005&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/1742-6596/391/1/012005
  • ISSN : 1742-6588
  • Web of Science ID : WOS:000314761400005

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