1996年9月
Fabrication of mesoscopic structures on n-GaAs surfaces by electrochemical scanning electron microscope
PHYSICA B
- ,
- 巻
- 227
- 号
- 1-4
- 開始ページ
- 271
- 終了ページ
- 275
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/0921-4526(96)00418-8
- 出版者・発行元
- ELSEVIER SCIENCE BV
We have shown that both electrochemical etching and metal deposition on n-GaAs surfaces are locally controlled in a Ni-salt solution by using a scanning tunneling microscope (STM), which is promising for an in situ fabrication process of mesoscope structures, such as metal gratings on GaAs and quantum point contacts.
- リンク情報
- ID情報
-
- DOI : 10.1016/0921-4526(96)00418-8
- ISSN : 0921-4526
- CiNii Articles ID : 80009325819
- Web of Science ID : WOS:A1996VR71500071