MISC

1996年9月

Fabrication of mesoscopic structures on n-GaAs surfaces by electrochemical scanning electron microscope

PHYSICA B
  • C Kaneshiro
  • ,
  • T Okumura

227
1-4
開始ページ
271
終了ページ
275
記述言語
英語
掲載種別
DOI
10.1016/0921-4526(96)00418-8
出版者・発行元
ELSEVIER SCIENCE BV

We have shown that both electrochemical etching and metal deposition on n-GaAs surfaces are locally controlled in a Ni-salt solution by using a scanning tunneling microscope (STM), which is promising for an in situ fabrication process of mesoscope structures, such as metal gratings on GaAs and quantum point contacts.

リンク情報
DOI
https://doi.org/10.1016/0921-4526(96)00418-8
CiNii Articles
http://ci.nii.ac.jp/naid/80009325819
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1996VR71500071&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/0921-4526(96)00418-8
  • ISSN : 0921-4526
  • CiNii Articles ID : 80009325819
  • Web of Science ID : WOS:A1996VR71500071

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