2018年5月1日
Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy
AIP Advances
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- 巻
- 8
- 号
- 5
- 開始ページ
- 55922-1
- 終了ページ
- 55922-5
- 記述言語
- 英語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.1063/1.5006398
- 出版者・発行元
- American Institute of Physics Inc.
The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.
- リンク情報
- ID情報
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- DOI : 10.1063/1.5006398
- ISSN : 2158-3226
- eISSN : 2158-3226
- SCOPUS ID : 85040763634