2016年
Perpendicular Magnetic Tunnel Junctions With Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance
IEEE MAGNETICS LETTERS
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- 巻
- 7
- 号
- 開始ページ
- 3104104
- 終了ページ
- 3104204
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/LMAG.2016.2584582
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
We investigate the tunnel magnetoresistance (TMR) effect and its applied bias voltage dependence for perpendicular magnetic tunnel junctions (p-MTJs) with low resistance-area (RA) products of about 10 Omega . mu m(2). We obtain a maximum TMR ratio of 248% among the examined devices. The bias-voltage dependence of the TMR ratio for these junctions is almost the same as that for junctions with RA products of about 10-1000 Omega . mu m(2) in the positive voltage region, while a fast drop in the TMR ratio is observed in the negative bias region. An output voltage of more than 200 mV is obtained for these p-MTJs.
- リンク情報
- ID情報
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- DOI : 10.1109/LMAG.2016.2584582
- ISSN : 1949-307X
- Web of Science ID : WOS:000383862800001