論文

査読有り
2005年

Experimental observation of formation processes in Si/SiO2 interface defects using in-situ UHV-ESR system

Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices
  • N Mizuochi
  • ,
  • W Futako
  • ,
  • S Yamasaki

864
開始ページ
91
終了ページ
98
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1557/PROC-864-E3.1
出版者・発行元
MATERIALS RESEARCH SOCIETY

We investigated the process Of P-b center generation during silicon oxidation following oxygen termination on a clean Si surface, based on which we discuss the microscopic origin of P-b centers. We constructed a UHV-ESR system which enabled measurements to be carried out at a low temperature of around 100-120 K, and used the system to study the Si(111)-7x7 surface after slight exposure to O-2. Based on the observed ESR spectra, we discuss the electronic structure of the Si(111)-7x7 surface.

リンク情報
DOI
https://doi.org/10.1557/PROC-864-E3.1
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000231500500014&DestApp=WOS_CPL
ID情報
  • DOI : 10.1557/PROC-864-E3.1
  • ISSN : 0272-9172
  • Web of Science ID : WOS:000231500500014

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