2005年
Experimental observation of formation processes in Si/SiO2 interface defects using in-situ UHV-ESR system
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices
- ,
- ,
- 巻
- 864
- 号
- 開始ページ
- 91
- 終了ページ
- 98
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1557/PROC-864-E3.1
- 出版者・発行元
- MATERIALS RESEARCH SOCIETY
We investigated the process Of P-b center generation during silicon oxidation following oxygen termination on a clean Si surface, based on which we discuss the microscopic origin of P-b centers. We constructed a UHV-ESR system which enabled measurements to be carried out at a low temperature of around 100-120 K, and used the system to study the Si(111)-7x7 surface after slight exposure to O-2. Based on the observed ESR spectra, we discuss the electronic structure of the Si(111)-7x7 surface.
- リンク情報
- ID情報
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- DOI : 10.1557/PROC-864-E3.1
- ISSN : 0272-9172
- Web of Science ID : WOS:000231500500014