Papers

Peer-reviewed Corresponding author
Dec 19, 2022

Temperature characteristics of a thickness shear mode quartz crystal resonator bonded to a support substrate

Applied Physics Letters
  • Hajime Satani
  • ,
  • Kuraudo Yasuda
  • ,
  • Masayuki Sohgawa
  • ,
  • Takashi Abe

Volume
121
Number
25
First page
252903
Last page
252903
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1063/5.0132804
Publisher
AIP Publishing

Thickness shear mode (TSM) resonators consisting of metal films and quartz plates are widely used for sensor applications such as film thickness monitoring, force sensors, and odor sensors. However, the current sensor geometry prevents further improvements in its sensitivity and stability. Thinning the plate is necessary for high sensitivity, and advanced fabrication technologies are required for their commercialization. The solution is to use a support substrate to increase the mechanical strength, which can guide the transmittance of the electric field. Herein, we report a TSM resonator bonded to a support substrate. An AT-cut quartz resonator with a floating electrode on the top side was bonded to the support substrate. Two excitation electrodes were placed under the substrate. The support substrates evaluated in this study included borosilicate glass, Z-cut quartz crystals, and AT-cut quartz crystal plates. The quartz crystal resonator (QCR) bonded to the AT-cut quartz crystal plate and positioned at 90° to the crystallographic x-axis shows an excellent temperature coefficient of frequency of −60 ± 14 ppb/°C for a temperature range 11–40 °C. The proposed method reduces temperature sensitivity to 1/4 or less compared to that without a substrate. Furthermore, the resonator could be used as a quartz crystal microbalance. The proposed method may inspire further high-frequency QCR-based biochemical chips or various sensor applications with TSM resonators.

Link information
DOI
https://doi.org/10.1063/5.0132804
URL
https://aip.scitation.org/doi/pdf/10.1063/5.0132804
ID information
  • DOI : 10.1063/5.0132804
  • ISSN : 0003-6951
  • eISSN : 1077-3118

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