2014年6月
Electric Current Dependence of a Self-Cooling Device Consisting of Silicon Wafers Connected to a Power MOSFET
JOURNAL OF ELECTRONIC MATERIALS
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- 巻
- 43
- 号
- 6
- 開始ページ
- 1757
- 終了ページ
- 1767
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1007/s11664-013-2856-9
- 出版者・発行元
- SPRINGER
A self-cooling device has been developed by combining a commercial n-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) and single-crystalline Sb-doped n-type or B-doped p-type silicon wafers in order to improve the heat removal or cooling quantitatively. The electric current dependence of the temperature distribution in the self-cooling device and the voltage between the source and drain electrodes have been measured to estimate the Peltier heat flux. We found that the average temperature is decreased for a power MOSFET in which an electric current of 50 A flows. In particular, the average temperature of the power MOSFET was decreased by 2.7A degrees C with the n-type Si wafer and by 3.5A degrees C with the p-type Si wafer, although an electric current of 40 A makes little difference. This certainly warrants further work with improved measurement conditions. Nonetheless, the results strongly indicate that such n-type or p-type silicon wafers are candidate materials for use in self-cooling devices.
- リンク情報
- ID情報
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- DOI : 10.1007/s11664-013-2856-9
- ISSN : 0361-5235
- eISSN : 1543-186X
- Web of Science ID : WOS:000336372400044