論文

査読有り
2013年4月

Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen

APPLIED PHYSICS LETTERS
  • Yukio Fukuda
  • ,
  • Hiroki Ishizaki
  • ,
  • Yohei Otani
  • ,
  • Chiaya Yamamoto
  • ,
  • Junji Yamanaka
  • ,
  • Tetsuya Sato
  • ,
  • Toshiyuki Takamatsu
  • ,
  • Hiroshi Okamoto
  • ,
  • Hidehumi Narita

102
13
開始ページ
132904-1
終了ページ
132904-4
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.4801471
出版者・発行元
AMER INST PHYSICS

The application of microwave-generated atomic oxygen as an oxidant is found to change the manner of atomic layer deposition (ALD) of an Al2O3 layer on a Ge substrate, leading to the spontaneous formation of aluminum germanate with a deposition rate higher than that of conventional ALD with water oxidant. Electrical characterization of the Al/aluminum germanate (11 nm)/p-Ge(100) structure indicates that both the bulk and the interface properties of the aluminum germanate are promising with small capacitance-voltage hysteresis of less than 20 mV and interface trap densities ranging from 2 x 10(11) to 6 x 10(11) cm(-2) eV(-1) in the upper half of the Ge band gap. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4801471]

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.1063/1.4801471
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000317240200065&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.4801471
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • Web of Science ID : WOS:000317240200065

エクスポート
BibTeX RIS