論文

査読有り
2006年6月

Formation of microcrystal line silicon and SiNx films by electron-beam-induced-chemical vapor deposition at ultra low temperature

THIN SOLID FILMS
  • T Sato
  • ,
  • M Mitsui
  • ,
  • J Yamanaka
  • ,
  • K Nakagawa
  • ,
  • Y Aoki
  • ,
  • S Sato
  • ,
  • C Miyata

508
1-2
開始ページ
61
終了ページ
64
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.tsf.2005.07.333
出版者・発行元
ELSEVIER SCIENCE SA

We synthesized silicon films (hydrogenated microcrystalline silicon in hydrogenated amorphous silicon) and silicon nitride films by electron-beam-induced-chemical vapor deposition combined with low-temperature H tunneling reactions on cooled substrates, which adsorb source gases (SiH4 or Si2H6). The photoconductivity of the silicon film was 0.7 x 10(-5) Omega(-1) cm(-1) and the dark conductivity was 3.3 x 10(-5) Omega(-1) cm(-1). The dielectric constant of the silicon nitride film was estimated to be 6.5-7.0. (c) 2005 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 5

リンク情報
DOI
https://doi.org/10.1016/j.tsf.2005.07.333
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000237460100016&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.tsf.2005.07.333
  • ISSN : 0040-6090
  • Web of Science ID : WOS:000237460100016

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