論文

査読有り
2002年5月

Study on the tunneling reaction of H atoms with a solid thin film of C3H6 at 10 K

JOURNAL OF PHYSICAL CHEMISTRY B
  • K Hiraoka
  • ,
  • T Sato
  • ,
  • S Sato
  • ,
  • T Takayama
  • ,
  • T Yokoyama
  • ,
  • N Sogoshi
  • ,
  • S Kitagawa

106
19
開始ページ
4974
終了ページ
4978
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/jp0137928
出版者・発行元
AMER CHEMICAL SOC

The reaction of the solid thin film of propene (C3H6) deposited on the silicon substrate at 10 K with cold H atoms (similar to27 K) sprayed over the solid films was studied. Propane and 2-methylpentane were found to be the major and minor reaction products, respectively. The rate for the formation of C3H8 increased steeply with a decrease of temperature from 35 to 10 K. This is the general trend for the low-temperature tunneling reactions investigated in our laboratory. With an increase of temperature from 40 to 55 K, the yield of C3H8 showed a slow increase. This may be due to the replenishment of the reactant C3H6 molecules to the surface above similar to40 K (i.e., solid-phase diffusion). The yield of C3H8 from C3H6 was lower than that of C2H6 from C2H4. This may be due either to the hindrance of the proximity approach of the H atom to the C3H6 double bond by the presence of the methyl group and/or to the annihilation of the H atoms by the H-atom abstraction reaction with the reaction product C3H8 to form the s-C3H7 radical on the surface of the solid film.

リンク情報
DOI
https://doi.org/10.1021/jp0137928
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000175601100011&DestApp=WOS_CPL
ID情報
  • DOI : 10.1021/jp0137928
  • ISSN : 1520-6106
  • Web of Science ID : WOS:000175601100011

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