MISC

2017年6月

Purification of 1.9-nm-diameter semiconducting single-wall carbon nanotubes by temperature-controlled gel-column chromatography and its application to thin-film transistor devices

JAPANESE JOURNAL OF APPLIED PHYSICS
  • Boanerges Thendie
  • ,
  • Haruka Omachi
  • ,
  • Jun Hirotani
  • ,
  • Yutaka Ohno
  • ,
  • Yasumitsu Miyata
  • ,
  • Hisanori Shinohara

56
6
記述言語
英語
掲載種別
速報,短報,研究ノート等(学術雑誌)
DOI
10.7567/JJAP.56.065102
出版者・発行元
IOP PUBLISHING LTD

Large-diameter semiconductor single-wall carbon nanotubes (s-SWCNTs) have superior mobility and conductivity to small-diameter s-SWCNTs. However, the purification of s-SWCNTs with diameters larger than 1.6 nm by gel filtration has been difficult owing to the low selectivity of the conventional purification method in these large-diameter regions. We report a combination of temperature-controlled gel filtration and the gradient elution technique that we developed to enrich a high-purity s-SWCNT with a diameter as large as 1.9nm. The thin-film transistor (TFT) device using the 1.9-nm-diameter SWCNT shows an average channel mobility of 23.7 cm(2)V(-1) s(-1), which is much higher than those of conventional SWCNTTFTs with smaller-diameters of 1.5 and 1.4 nm. (C) 2017 The Japan Society of Applied Physics

Web of Science ® 被引用回数 : 8

リンク情報
DOI
https://doi.org/10.7567/JJAP.56.065102
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000402521900001&DestApp=WOS_CPL

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