A method for analyzing the electron capture process in the charge pumping (CP) sequence is proposed and demonstrated. The method monitors the electron current in the CP sequence in time domain. This time-domain measurements enable us to directly access the process of the electron capture to the interface defects, which are obscured in the conventional CP method. Using the time-domain measurements, the rise time dependence of the capture process is systematically investigated. We formulate the capture process based on the rate equation and derive an analytic form of the current due to the electron capture to the defects. Based on the formula, the experimental data are analyzed and the capture cross section is obtained. In addition, the time-domain data unveil that the electron capture process completes before the electron channel opens, or below the threshold voltage in a low frequency range of the pulse. (C) 2014 AIP Publishing LLC.