論文

2013年

Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs

ULSI PROCESS INTEGRATION 8
  • T. Tsuchiya
  • ,
  • N. Tamura
  • ,
  • A. Sakakidani
  • ,
  • K. Sonoda
  • ,
  • M. Kamei
  • ,
  • S. Yamakawa
  • ,
  • S. Kuwabara

58
9
開始ページ
265
終了ページ
279
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1149/05809.0265ecst
出版者・発行元
ELECTROCHEMICAL SOC INC

We propose a novel method for characterizing the oxide traps that participate in random telegraph noise (RTN) by using charging history effects on the traps. In this method, the variation in the frequency of the high/low drain current derived from RTN with the charging history is monitored instead of the time-scale parameters that are usually used. Moreover, we also propose a method to determine the number and charging conditions of the traps. These methods are particularly effective for characterizing individual oxide traps in multi-trap RTN.

リンク情報
DOI
https://doi.org/10.1149/05809.0265ecst
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000329642500032&DestApp=WOS_CPL
ID情報
  • DOI : 10.1149/05809.0265ecst
  • ISSN : 1938-5862
  • Web of Science ID : WOS:000329642500032

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