Shigeya Naritsuka

Profile Information

Affiliation: Faculty of Science and Technology Department of Materials Science and Engineering, Meijo University

Degree: Doctor of Engineering(The University of Tokyo)
Master of Engineering(Tokyo Institute of Technology)

Researcher number: 80282680
J-GLOBAL ID: 200901025733562138
researchmap Member ID: 1000255428

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Nanotechnology/Materials / Crystal engineering /
Nanotechnology/Materials / Applied materials /

Education

Apr, 1993 - Mar, 1996

The Graduate School of Engineering, The University of Tokyo
Apr, 1979 - Mar, 1981

Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Apr, 1975 - Mar, 1979

Faculty of Engineering, Nagoya Institute of Technology

Committee Memberships

1997

理事, 日本結晶成長学会

Papers

139

In situ XAFS study on chemical states of Co and Ir nanoparticles under conventional growth condition of single-walled carbon nanotube via alcohol catalytic chemical vapor deposition

Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Yuichi Haruyama, Toru Asaka, Takahiro Maruyama

Chemical Physics Letters, 808 140135-140135, Dec, 2022
Direct precipitation of multilayer graphene on c-plane sapphire using a crystallized Ni catalyst

Asato Nakashima, Tomoaki Murahashi, Ryosuke Achiwa, Tatsuya Kashio, Takahiro Maruyama, Shigeya Naritsuka

Journal of Crystal Growth, 598 126885-126885, Nov, 2022
In situ XAFS study of the chemical state of a Co catalyst during single-walled carbon nanotube growth under conventional growth conditions using alcohol catalytic chemical vapor deposition

Shusaku Karasawa, Kamal Prasad Sharma, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

CHEMICAL PHYSICS LETTERS, 804, Oct, 2022
Nanodiamond as the carbon source for precipitation of multilayer graphene on a Si substrate

Tatsuya Kashio, Asato Nakashima, Tomoaki Murahashi, Ryosuke Achiwa, Takahiro Maruyama, Shigeya Naritsuka

JAPANESE JOURNAL OF APPLIED PHYSICS, 61(6), Jun, 2022
Iridium‐Catalyzed Single‐Walled Carbon Nanotube Synthesis by Alcohol‐Gas‐Source Method Under Low Ethanol Pressure: Growth Temperature Dependence

Daiki Yamamoto, Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

Crystal Research and Technology, 57(6) 2100226-2100226, Jan 14, 2022
Vertically aligned growth of small-diameter single-walled carbon nanotubes on flexible stainless steels by alcohol catalytic chemical vapor deposition with Ir catalyst on alumina buffer layer

Shu Kondo, Daiki Yamamoto, Kamal Prasad Sharma, Yazid Yaakob, Takahiro Saida, Shigeya Naritsuka, Masaki Tanemura, Takahiro Maruyama

JAPANESE JOURNAL OF APPLIED PHYSICS, 60(12), Dec, 2021
Osmium catalyzed growth of vertically aligned and small-diameter single-walled carbon nanotubes by alcohol catalytic chemical vapor deposition

Takahiro Maruyama, Daiki Yamamoto, Masaya Kobayashi, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka

Diamond and Related Materials, 117 108501-108501, Aug, 2021
Low angle incidence microchannel epitaxy of GaN using graphene as a mask

Shun Takenaka, Daisuke Kato, Takahiro Maruyama, Shigeya Naritsuka

Journal of Crystal Growth, 563 126110-126110, Jun, 2021
Effect of crystallization of Ni catalyst on direct precipitation of multilayer graphene using W capping layer

Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Seiji Fujikawa, Takuo Sasaki, Masamitu Takahasi, Shigeya Naritsuka

JOURNAL OF CRYSTAL GROWTH, 555, Feb, 2021
Effect of Growth Pressure on Graphene Direct Growth on an A-Plane Sapphire Substrate: Implications for Graphene-Based Electronic Devices

Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka

ACS Applied Nano Materials, 4(1) 343-351, Jan 22, 2021
Effect of growth temperature and ethanol flow rate on synthesis of single-walled carbon nanotube by alcohol catalytic chemical vapor deposition using Ir catalyst in hot-wall reactor

Ai Misaki, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

Japanese Journal of Applied Physics, 60(1) 015003-015003, Jan 1, 2021
X-ray in situ observation of graphene precipitating directly on sapphire substrate with and without Ti capping layer

Shigeya Naritsuka, Jumpei Yamada, Yuki Ueda, Asato Nakashima, Tatsuya Kashio, Takahiro Maruyama, Seiji Fujikawa, Takuo Sasaki, Masamitu Takahasi

JOURNAL OF CRYSTAL GROWTH, 549, Nov, 2020
Vertically aligned growth of small-diameter single-walled carbon nanotubes by alcohol catalytic chemical vapor deposition with Ir catalyst

Takahiro Maruyama, Takuya Okada, Kamal Prasad Sharma, Tomoko Suzuki, Takahiro Saida, Shigeya Naritsuka, Yoko Iizumi, Toshiya Okazaki, Sumio Iijima

APPLIED SURFACE SCIENCE, 509, Apr, 2020 Peer-reviewed
Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer

Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka

JOURNAL OF CRYSTAL GROWTH, 534, Mar, 2020 Peer-reviewed
Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD

Yuki Ueda, Jumpei Yamada, Taishi Ono, Takahiro Maruyama, Shigeya Naritsuka

APPLIED PHYSICS LETTERS, 115(1), Jul, 2019 Peer-reviewed
Low-temperature synthesis of single-walled carbon nanotubes with Co catalysts via alcohol catalytic chemical vapor deposition under high vacuum

Takuya Okada, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama

MATERIALS TODAY COMMUNICATIONS, 19 51-55, Jun, 2019 Peer-reviewed
Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method

Jumpei Yamada, Shigeyoshi Usami, Yuki Ueda, Yoshio Honda, Hiroshi Amano, Takahiro Maruyama, Shigeya Naritsuka

JAPANESE JOURNAL OF APPLIED PHYSICS, 58(4), Apr, 2019 Peer-reviewed
Effect of growth pressure on graphene direct growth on r-plane and c-plane sapphires by low-pressure CVD

Yuki Ueda, Jumpei Yamanda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama, Shigeya Naritsuka

JAPANESE JOURNAL OF APPLIED PHYSICS, 58(SA), Feb, 2019 Peer-reviewed
Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al2O3 buffer layer on carbon nanotube yield

Okada, T, Saida, T, Naritsuka, S, Fukuda, K, Maruyama, T

Transactions of the Materials Research Society of Japan, 44(2) 65-68, 2019 Peer-reviewed
Vertically Aligned Single-Walled Carbon Nanotube Growth from Ir Catalysts by Alcohol Gas Source Method

Takuya Okada, Takahiro Saida, Shigeya Naritsuka, Takahiro Mairuyama

MRS ADVANCES, 4(3-4) 225-230, 2019 Peer-reviewed

Misc.

483

Growth temperature dependence of GaN nucleation on graphene/r-plane sapphire template

Niwa Kazuki, Fukami Takeshi, Nonogaki Masami, Kato Yukito, Ueda Yuki, Maruyama Takahiro, Naritsuka Shigeya

JSAP Annual Meetings Extended Abstracts, 2021.1 2609-2609, Feb 26, 2021
Growth temperature dependence of SWCNT growth on SiO₂/Si substrates by ACCVD using Ir catalyst

Yamamoto Daiki, Kamal Sharma, Saida Takahiro, Narituka Shigeya, Maruyama Takahiro

JSAP Annual Meetings Extended Abstracts, 2021.1 2806-2806, Feb 26, 2021
Direct growth of multilayer graphene nucleation on insulating substrate using Ga-Ni solution

Fukami Takeshi, Niwa Kazuki, Kobayashi Yuta, Maruyama Takahiro, Naritsuka Shigeya

JSAP Annual Meetings Extended Abstracts, 2021.1 2845-2845, Feb 26, 2021
Quality improvement of precipitated graphene using crystallized Ni layer

Murahashi Tomoaki, Nakashima Asato, Maruyama Takahiro, Naritsuka Shigeya

JSAP Annual Meetings Extended Abstracts, 2021.1 2865-2865, Feb 26, 2021
In-situ X-ray diffraction analysis of graphene direct precipitation growth using nanodiamonds -- catalysis thickness dependence --

Kashio Tatsuya, Fukami Takeshi, Niwa Kazuki, Nakashima Asato, maruyama Takahiro, Naritsuka Shigeya

JSAP Annual Meetings Extended Abstracts, 2021.1 2856-2856, Feb 26, 2021
Characterization of Electrical Properties for Graphene by Electrical Circuit Model with Transmission THz-TDS

Suzuki Hiroki, Fujii Takashi, Mouri Shinichiro, Iwamoto Toshiyuki, Ueda Yuki, Naritsuka Shigeya, Nakajima Makoto, Araki Tsutomu

JSAP Annual Meetings Extended Abstracts, 2021.1 2816-2816, Feb 26, 2021
GaN low-angle incident microchannel epitaxy using graphene microchannel-Guarantee of growth selectivity-

加藤雄騎人, 野々垣誠望, 丹羽和希, 丸山隆浩, 成塚重弥

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Direct precipitation of graphene using crystallized Ni catalyst-Seem-less stitching of graphene growth islands-

村橋知明, 三田和輝, 丸山隆浩, 成塚重弥

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Direct precipitation of multilayer graphene using crystallized Ni catalyst-Multilayer graphene growth with highly-aligned crystal orientation-

成塚重弥, 中島諒人, 村橋知明, 樫尾達也, 丸山隆浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Growth of single-walled carbon nanotubes with Ir catalyst on buffer layer prepared by coating method

近藤秀, 山本大貴, SHARMA Kamal P, 才田隆広, 才田隆広, 成塚重弥, 丸山隆浩, 丸山隆浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Effect of growth temperature on crystal orientation of GaN growth on graphene/r-plane sapphire substrate

丹羽和希, 野々垣誠望, 加藤雄騎人, 福西康寛, 丸山隆浩, 成塚重弥

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Characterization of Electrical Properties for Graphene with THz-TDS Ellipsometry

鈴木拓輝, 藤井高志, 藤井高志, 毛利真一郎, 岩本敏志, 上田悠貴, 成塚重弥, AGULTO V.C., 中嶋誠, 荒木努

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Effects of ethanol pressure and growth temperature on SWCNT growth using Ir catalyst

山本大貴, 近藤秀, 柄澤周作, SHARMA Kamal P, 才田隆広, 才田隆広, 成塚重弥, 丸山隆浩, 丸山隆浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Investigation of growth mechanism of single-walled carbon nanotubes from catalyst using in situ XAFS: Comparison of Co and Fe

柄澤周作, 山本大貴, SHARMA Kamal P, 才田隆広, 才田隆広, 成塚重弥, 丸山隆浩, 丸山隆浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Direct growth of free-standing graphene on r-plane sapphire substrate with holes

三田和輝, 福西康寛, 本田康介, 丸山隆浩, 成塚重弥

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Elucidation of growth mechanism of single-walled carbon nanotubes from Co-catalyst by in situ XAFS measurement

柄澤周作, 山本大貴, SHARMA Kamal P, 才田隆広, 才田隆広, 成塚重弥, 丸山隆浩, 丸山隆浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Growth of small-diameter SWCNTs using Os catalyst

丸山隆浩, 丸山隆浩, 小林将也, 山本大貴, SHARMA Kamal P, 才田隆広, 才田隆広, 成塚重弥

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Direct precipitation of patterned graphene using resist pattern as carbon source

後藤隆明, 阿知波良介, 村橋知明, 成塚重弥, 丸山隆浩

結晶成長国内会議予稿集(CD-ROM), 50th, 2021
Nucleation of graphene on graphene/r-plane sapphire by low-pressure CVD

福西康寛, 村橋知明, 三田和輝, 上田悠貴, 本田康介, 丸山隆浩, 成塚重弥

結晶成長国内会議予稿集(CD-ROM), 50th, 2021
Direct precipitation of few layer graphene using crystallized Ni catalyst

阿知波良介, 後藤隆明, 村橋知明, 柳瀬優太, 曽我司, 天野龍一, 成塚重弥, 丸山隆浩, 佐々木拓生, 藤川誠司

結晶成長国内会議予稿集(CD-ROM), 50th, 2021

Books and Other Publications

Chapter Four - Microchannel epitaxy of III–V layers on Si substrates Semiconductors and Semimetals, Vol. 101

Edited by Sebastian Lourdudoss, John E. Bowers, Chennupati Jagadish, Shigeya Naritsuka (Role: Joint author, pp.139-161)

Elsevier Ltd., 2019
Initial Growth Process of Carbon Nanotubes in Surface Decomposition of SiC

Takahiro Maruyama, Shigeya Naritsuka (Role: Joint author, pp29-46)

In Tech Co., 2011
新インターユニバーシティ「固体電子物性」

若原昭浩編著, 成塚重弥 (Role: Joint author, pp.8-31.)

オーム社, Mar, 2009
Carbon Nanotube Growth by Surface Decomposition of SiC

Takahiro Maruyama, Shigeya Naritsuka (Role: Joint author, pp.131-148)

NOVA Science Publishers, 2009
薄膜ハンドブック（第２版）

日本学術振興会薄膜第131委員会編, 成塚重弥 (Role: Joint author)

Mar, 2008
表面科学の基礎と応用

日本表面科学会編, 成塚重弥 (Role: Joint author)

（株）エヌ・ティー・エス, Jun, 2004
Growth of Crystals for Modern Technology

K.Byrappa、T.Ohachi編集, Tatau Nishinaga, Shigeya Naritsuka (Role: Joint author)

Springer, Feb, 2003
III-V族ベース強磁性半導体によるバンドエンジニアリングと磁気光学デバイスへの応用

田中, 雅明, 中野, 義昭, 西永, 頌, 成塚, 重弥 (Role: Joint author)

田中雅明, 2002
結晶成長学辞典

(Role: Joint author)

共立出版, Jul, 2001
マイクロチャンネルエピタキシを用いたSi上無転位GaAsの成長とレーザーの試作

西永, 頌, 田中, 雅明, 成塚, 重弥 (Role: Joint author)

西永頌, 2000
アドバンストエレクトロニクスシリーズ I-18「結晶成長の基礎」

西永頌編著;, 成塚重弥 (Role: Joint author)

培風館, Jun, 1997

Professional Memberships

Works

Research Projects

Study on ultrashort pulsed semiconductor laser diodes for fluorescent bio-imaging

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2019 - Mar, 2023
Operando EXAFS study on growth mechanism of carbon nanotube

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2019 - Mar, 2023
Basic research for realization of heteroepitaxial growth platform

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2015 - Mar, 2020

Naritsuka Shigeya
Invention of 3D Active sites in Advanced Semiconductors and Functional Materials

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area), Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area), Japan Society for the Promotion of Science, Jul, 2014 - Mar, 2019

Fukumura Tomoteru, HIROSE Yasushi
Growth of GaN template substrate by flow-assisted-mode liquid phase epitaxy

Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research, Grant-in-Aid for Challenging Exploratory Research, Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017

Naritsuka Shigeya
Fabrication of high-quality graphene by liquid phase epitaxial growth

Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research, Grant-in-Aid for Challenging Exploratory Research, Japan Society for the Promotion of Science, Apr, 2013 - Mar, 2016

Maruyama Takahiro, NARITSUKA SHIGEYA, TANAKA SHIN-ICHIRO, SAIDA TAKAHIRO
Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research, Grant-in-Aid for Specially Promoted Research, Japan Society for the Promotion of Science, 2013 - 2015

AMANO Hiroshi, Honda Yoshio, DEKI Manato, OHNO Yutaka, MIYAKE Hideto, NARITSUKA Shigeya, TAKEUCHI Tetsuya, IWAYA Motoaki, FUKUYAMA Hiroyuki
Approach from crystal growth to overcome limits of Si integrated circuits

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, Apr, 2010 - Mar, 2014

NARITSUKA Shigeya, MARUYAMA Takahiro, KAMIYAMA Satoshi
Fabrication and property of CNT/SiC heterojunction formed by surface decomposition of SiC

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2009 - 2012

MARUYAMA Takahiro, NARITSUKA Shigeya
Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuits

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2006 - 2009

NARITSUKA Shigeya, MARUYAMA Takahiro, AMANO Hiroshi
Carbon Nanotube Growth using photo-excitation

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2005 - 2008

MARUYAMA Takahiro, NARITSUKA Shigeya
Realization of dislocation-free epitaxy using nanochannel epitaxy

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2002 - 2005

NARITSUKA Shigeya, ANDO Yoshinori, MARUYAMA Takahiro
低コスト太陽電池用半導体単結晶基板の新作製法

科学研究費助成事業萌芽研究, 萌芽研究, 日本学術振興会, 2002 - 2003

成塚重弥, 丸山隆浩
低角入射分子線エピタキシ法による絶縁膜上への半導体単結晶薄膜の横方向成長

科学研究費助成事業基盤研究(B), 基盤研究(B), 日本学術振興会, 2000 - 2003

西永頌, 成塚重弥
Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2000 - 2002

NARITSUKA Shigeya, ASAKAWA Kiyoshi, MARUYAMA Takahiro
結晶成長場制御によるナノ構造の作製

2002
Fabrication of Nano-structre by Controlling the Growth Field

2002
Band-engineering using III-V based ferromagnetic semiconductors and its application to magneto-optical devices

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, 1999 - 2001

TANAKA Masaaki, NARITSUKA Shigeya, NISHINAGA Tatau, NAKANO Yoshiaki
Ferromagnet/Semiconductor Hybrid Materials : Epitaxial Growth and Applications

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 1999 - 2001

TANAKA Masaaki, NISHINAGA Tatau
ハイブリッドマイクロチャンネルエピタキシーを用いたSi上のGaAs無転位結晶

科学研究費助成事業萌芽的研究, 萌芽的研究, 日本学術振興会, 1999 - 2000

成塚重弥, 田中雅明, 西永頌

Industrial Property Rights

特開2021-175694 半導体の製造方法

成塚重弥
特許第6871614号導電体の製造方法

成塚重弥, 山田純平, 藤原亨介
特許第6711644号窒化物半導体の製造基板、及び窒化物半導体の製造方法

成塚重弥
特許第6708397号グラフェン基板の製造方法

成塚重弥, 山田純平
特開2018-188329 構造体

成塚重弥, 上田悠貴
特開2018-181863 グラフェン基板、及びこの製造方法

成塚重弥, 山田純平
特許第5896494号触媒金属層の製造方法及びグラフェン素材の製造方法

成塚重弥, 丸山隆浩
特許第5783530号グラフェン配線構造

成塚重弥, 丸山隆浩
特許第5783529号グラフェン素材の製造方法

成塚重弥, 丸山隆浩
特許第5783526号グラフェン素材の製造方法及びグラフェン素材

成塚重弥, 丸山隆浩
特許第5010774号半導体装置の製造方法及び半導体装置

西永頌, 成塚重弥, 岸本大輔, 清水了典
特許第4979296号カーボンナノチューブの製造方法

粟野祐二, 成塚重弥, 川端章夫, 丸山隆浩
特許第4903982号半導体素子及びその製造方法

成塚重弥, 矢嶋孝義
特許第4780546号カーボンナノチューブの作製方法及び電流制御素子の作製方法

成塚重弥, 丸山隆浩, 楠美智子
特許第4747319号ヘテロエピタキシャル成長方法

成塚重弥, 丸山隆浩
特許第4575013号光電子集積装置の製造方法

成塚重弥, 丸山隆浩, 森分達也
特開2010-098194 蛍光体、発光素子、発光装置及び蛍光体の製造方法

成塚重弥, 上山智, 和田貴志
特許第4474305号半導体装置の製造方法

岸本大輔, 西永頌, 成塚重弥
特許第4320193号薄膜形成方法

成塚重弥, 矢嶋孝義, 正木裕一
特許第4304034号超接合半導体素子の製造方法

岸本大輔, 上野勝典, 清水了典, 岡哲史, 西永頌, 成塚重弥

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