1999年1月
Nanometer-scale hole- and bit-modifications of oligosilane- and stearic acid-Langmuir-Blodgett films
THIN SOLID FILMS
- ,
- ,
- 巻
- 338
- 号
- 1-2
- 開始ページ
- 155
- 終了ページ
- 160
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0040-6090(98)01005-0
- 出版者・発行元
- ELSEVIER SCIENCE SA
Nanometer-scale hole- and bit-modifications were successfully performed by applying the local electric field of scanning tunneling microscope (STM) to an oligosilane-langmuir-Blodgett (LB) film composed of a tridecamethylhexasilanylacetic acid (MeSi(6)AA) and a stearic acid-LB film. It has been found possible to perform these modifications on the monolayer with several tens nanometer-scale resolution by halting the probe tip and applying a higher bias voltage than used for usual STM imaging. Each modification could be selected by changing the polarity and the bias voltage applied. Examination of hole- and bit-formation conditions has suggested that the electron beam emitted from the tip under a high electric field makes the hole modification, and that chemical oxidation or reduction of the concerning molecule results in the bit modification. (C) 1999 Elsevier Science S.A. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0040-6090(98)01005-0
- ISSN : 0040-6090
- J-Global ID : 200902195266155333
- Web of Science ID : WOS:000078758500025