KOKUBUN Yoshihiro

J-GLOBAL         Last updated: Apr 20, 2018 at 14:33
 
Avatar
Name
KOKUBUN Yoshihiro
Affiliation
Ishinomaki Senshu University
Section
School of Science and Engineering, Department of Information Technology and Electronics, Department of Information Technology and Electronics
Job title
Professor
Degree
Doctor of Engineering(Tohoku University)

Research Areas

 
 

Academic & Professional Experience

 
 
   
 
Center, Research Scientist
 
 
   
 
Exploratory Research for Advanced Technology,
 
 
   
 
Researcher
 
 
   
 
Center, Senior Research Scientist, Chief
 
 
   
 
Research Scientist
 
 
   
 
Ishinomaki Senshu University
 
1974
 - 
1979
Tohoku University, Research Associate
 
1979
 - 
1982
Toshiba Corporation, Research and Development
 
1982
 - 
1984
Research Development Corporation of Japan,
 
1984
 - 
1998
Toshiba Corporation, Research and Development
 

Education

 
 
 - 
1974
Electronic Engineering, Graduate School, Division of Engineering, Tohoku University
 
 
 - 
1969
Electronic Engineerig, Faculty of Engineering, Tohoku University
 

Published Papers

 
Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios
S. Nakagomi, K. Hiratsuka, Y. Kakuda, Y. Kokubun
ECS J. Solid State Sci. Tech.   6(2) Q3030-Q3035   Feb 2017
Y. Kokubun, S. Kubo, S. Nakagomi
Appl. Phys. Express   9 091101-1-091101-3   Sep 2016
S. Nakagomi, S. Kubo, Y. Kokubun
J. Cryst. Growth   445 73-77   Jul 2016
S. Nakagomi, Y. Kokubun
Phys. Status Solidi B   253(6) 1217-1221   Jun 2016
Y. Kokubun, Y. Amano, Y. Meguro, S, Nakagomi
Thin Solid Films   601 76-79   Feb 2016   [Refereed]
S. Nakagomi, S. Kaneko, Y. Kokubun
Phys. Status Solidi B   252(9) 2117-2122   Sep 2015   [Refereed]
S. Nakagomi, T. Sato, Y. Takahashi, Y. Kokubun
Sensors and Actuators A   232 208-213   Aug 2015   [Refereed]
S. Nakagomi, S. Kaneko, Y. Kokubun
Phys. Status Solidi B   252(3) 612-620   Mar 2015   [Refereed]
Devices Based on Series-connected Schottky Junctions and β-Ga2O3/SiC Heterojunctions Characterized as Hydrogen Sensors
S. Nakagomi, K. Yokoyama, Y. Kokubun
J. Sens. Sens. Syst   3(2) 231-239   Oct 2014   [Refereed]

Misc

 
Computer Controlled Growth of GaP by LEC Technique
Oyo Buturi   52 513   1983
Etch Pits and Edge Dislocations of CdSe Single Crystals
Oyo Buturi   41 835   1972

Research Grants & Projects

 
Growth and Characterization of Compound Semiconductors
The Other Research Programs
Fabrication of Electronic and Optoelectronic Devices
The Other Research Programs

Patents

 
Apparatus for manufacturing single crystals
USP4397813
Method of manufacturing compound semiconductor thin film
EPC390552
Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a V-group element by metal organics chemical vapor deposition
USP5168077
Semiconductor light emitting device
USP5153889
Lichtemittierende Halbleitervorrichtung
DE4017632