SAKAI Tetsushi

J-GLOBAL         Last updated: Jan 18, 2008 at 00:00
 
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Name
SAKAI Tetsushi
Affiliation
Former Institution /Organization Interdisciplinary Graduate School of Science and Engineering, Information Processing
Job title
Professor

Research Areas

 
 

Education

 
 
 - 
1966
Faculty of Engineering, Hokkaido University
 

Awards & Honors

 
1997
SSDM Award (ISSDM)
 
1997
BJT 50th Anniversary Award (IEEE BCTM)
 
1996
J. J. Ebers Award (IEEE Electron Devices Society)
 

Misc

 
HfOxNy Thin Films Formed by ECR Ar/N2 Plasma Oxidation of HfN Thin Films
The 15th Symposium of The Materials Research Society of Japan   G1-O07-M,129   2004
AlON thin films formed by ECR plasma oxidation for high-k gate insulator application
Mat. Res. Soc. Symp. Proc.   786 E6.10.1-6   2004
A Study on Selective Etching of SiGe Layers and Electrical Characteristics of MOS Diodes Formed after Selective Etching in SBSI Process
Third Internatinal Workshop on New Group Ⅳ (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices   79-80   2004
Characterization of ALON thin films formed by ECR plasma oxidation of AlN/Si(100)
IEICE Trans. Electron.   E87-C 24-29   2004
Microelectronics Reliability   44(3) 449-458   2004

Research Grants & Projects

 
Ultra-high-speed and low-power integrated semiconductor devices
Functional I/O Structures of system on a chip
Device structures of ultra-high-speed analog/digital LSI

Patents

 
Method of Manufacturing SOI Substrate
USA Appl.No.08/886876
Semiconductor Devices
USA Appl.No.09/143510
Bipolar Transistors and Method of Manufacturing the Same
Method of Manufacturing SOI Substrate
Method of Manufacturing SOI Substrate
EPC Appl.No.97401605.7