MISC

2017年

Investigation of Cu2SnSe3 Preparation by Simultaneous Electrodeposition as Precursor of Cu2ZnSnSe4 Thin Film Solar Cell

4TH INTERNATIONAL CONFERENCE ON RESEARCH, IMPLEMENTATION, AND EDUCATION OF MATHEMATICS AND SCIENCES (ICRIEMS): RESEARCH AND EDUCATION FOR DEVELOPING SCIENTIFIC ATTITUDE IN SCIENCES AND MATHEMATICS
  • Gunawan
  • ,
  • Abdul Haris
  • ,
  • Didik Stiyo Widodo
  • ,
  • Wilman Septina
  • ,
  • Shigeru Ikeda

1868
開始ページ
20005
終了ページ
記述言語
英語
掲載種別
DOI
10.1063/1.4995091
出版者・発行元
AMER INST PHYSICS

Chalcogenide material of multinary metals are of interest in relation as optoelectronic devices such as laser and solar cell. Cu2SnSe3, ternary chalcogenide, is semiconductor with low bandgap. Beside that Cu2SnSe3 is important precursor for the growth of a promising Cu2ZnSnSe4 thin film solar cell since it contains elements that is abundance in the earth crust. The aim of this work is to synthesis Cu2SnSe3 thin film compound by using simultaneous electrodeposition. The product then was characterized using EDX, XRD, RAMAN and SEM. The result showed that Cu2SnSe3 can be prepared by electrodeposition at a potential of -0.6V vs. Ag/AgCl for 20 min. Arumealing can cause the increase of Cu2SnSe3 sample crystalinity. Annealing in argon atmosphere at 500 degrees C affected selenium evaporation in the film, therefore it improved Cu/Sn ratio. Further, annealing in selenium atmosphere at temperature of 500 degrees C can increase the intensity of Cu2SnSe3 crystal much better and also improve the Se/(Cu+Si) ratio close to ideal value. Spectra of XRD and raman also proved the presence of Cu2SnSe3 in the prepared thin film

リンク情報
DOI
https://doi.org/10.1063/1.4995091
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000410780300005&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.4995091
  • ISSN : 0094-243X
  • Web of Science ID : WOS:000410780300005

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