2011年9月
Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba2IrO4
PHYSICAL REVIEW B
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- 巻
- 84
- 号
- 11
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.84.115127
- 出版者・発行元
- AMER PHYSICAL SOC
Electronic transport properties in the spin-orbit Mott insulator Ba2IrO4 were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba2IrO4. In the insulating state (P < 13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P >= 13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba2IrO4 exhibits an unconventional critical exponent (delta = 1-2) at the M-I transition. These results suggest that Ba2IrO4 has an unusual electronic state affected by the "marginal quantum critical point (MQCP)."
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.84.115127
- ISSN : 1098-0121
- ORCIDのPut Code : 45573518
- Web of Science ID : WOS:000295084000006