2018年
Possible high thermoelectric power in semiconducting carbon nanotubes :A case study of doped one-dimensional semiconductors
Journal of the Physical Society of Japan
- ,
- 巻
- 87
- 号
- 2
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7566/JPSJ.87.024707
- 出版者・発行元
- Physical Society of Japan
We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent t-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor (PF) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the PF values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the PF values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that “band-edge engineering” will be crucial for solid development of high-performance thermoelectric materials.
- ID情報
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- DOI : 10.7566/JPSJ.87.024707
- ISSN : 1347-4073
- ISSN : 0031-9015
- SCOPUS ID : 85040782030