1997年8月
Investigation on the surface electronic states of the Si(001) c(4x2) and c(8x8) surfaces: An electron energy loss spectroscopy study
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
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- ,
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- 巻
- 36
- 号
- 8A
- 開始ページ
- L975
- 終了ページ
- L978
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/jjap.36.L975, 10.1143/jjap.36.l975
- 出版者・発行元
- JAPAN J APPLIED PHYSICS
The surface electronic states of the clean (and GO-covered) Si(001) c(4x2) and c(8x8) surfaces at 90 K have been studied by using high resolution electron energy loss spectroscopy. On the clean c(8x8) surface, the loss peaks are observed at 0.3, 0.7 and 1.2 eV. The 1.2 eV loss is sensitive to the CO adsorption, whereas the 0.3 and 0.7 eV losses are not sensitive. These suggest that the c(8x8) structure contains the defects which are not understood by the dimer vacancy model.
- リンク情報
- ID情報
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- DOI : 10.1143/jjap.36.L975
- DOI : 10.1143/jjap.36.l975
- ORCIDのPut Code : 38500518
- Web of Science ID : WOS:A1997XQ83200002