2018年
Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer
Journal of Nanomaterials
- 巻
- 2018
- 号
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1155/2018/5174103
© 2018 C. Chuang et al. We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime. By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature T e at various driving currents I while keeping the lattice temperature T L fixed. Interestingly, it is found that T e is proportional to I, indicating little electron-phonon scattering in our device. Furthermore the average rate of energy loss per carrier P e is proportional to (T e 2 - T L 2), suggesting the heat diffusion rather than acoustic phonon processes in our system. The long energy relaxation times due to the weak electron-phonon coupling in CVD graphene capped with h-BN layer as well as in exfoliated multilayer graphene can find applications in hot carrier graphene-based devices.
- リンク情報
- ID情報
-
- DOI : 10.1155/2018/5174103
- ISSN : 1687-4110
- eISSN : 1687-4129
- SCOPUS ID : 85047848230