論文

査読有り
1999年6月

Brillouin scattering study of bulk GaN

JOURNAL OF APPLIED PHYSICS
  • M Yamaguchi
  • ,
  • T Yagi
  • ,
  • T Sota
  • ,
  • T Deguchi
  • ,
  • K Shimada
  • ,
  • S Nakamura

85
12
開始ページ
8502
終了ページ
8504
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.370635
出版者・発行元
AMER INST PHYSICS

High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate. (C) 1999 American Institute of Physics. [S0021-8979(99)03112-6].

リンク情報
DOI
https://doi.org/10.1063/1.370635
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000080517000075&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.370635
  • ISSN : 0021-8979
  • eISSN : 1089-7550
  • Web of Science ID : WOS:000080517000075

エクスポート
BibTeX RIS