1999年6月
Brillouin scattering study of bulk GaN
JOURNAL OF APPLIED PHYSICS
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- 巻
- 85
- 号
- 12
- 開始ページ
- 8502
- 終了ページ
- 8504
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.370635
- 出版者・発行元
- AMER INST PHYSICS
High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate. (C) 1999 American Institute of Physics. [S0021-8979(99)03112-6].
- リンク情報
- ID情報
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- DOI : 10.1063/1.370635
- ISSN : 0021-8979
- eISSN : 1089-7550
- Web of Science ID : WOS:000080517000075