論文

査読有り
1999年9月

Optical properties of an InGaN active layer in ultraviolet light emitting diode

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
  • T Deguchi
  • ,
  • K Torii
  • ,
  • K Shimada
  • ,
  • T Sota
  • ,
  • R Matsuo
  • ,
  • M Sugiyama
  • ,
  • A Setoguchi
  • ,
  • S Chichibu
  • ,
  • S Nakamura

38
9AB
開始ページ
L975
終了ページ
L977
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1143/jjap.38.L975
出版者・発行元
JAPAN SOC APPLIED PHYSICS

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

リンク情報
DOI
https://doi.org/10.1143/jjap.38.L975
CiNii Articles
http://ci.nii.ac.jp/naid/110003921403
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000083181100002&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/jjap.38.L975
  • ISSN : 0021-4922
  • CiNii Articles ID : 110003921403
  • Web of Science ID : WOS:000083181100002

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