1999年9月
Optical properties of an InGaN active layer in ultraviolet light emitting diode
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
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- 巻
- 38
- 号
- 9AB
- 開始ページ
- L975
- 終了ページ
- L977
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/jjap.38.L975
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.
- リンク情報
- ID情報
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- DOI : 10.1143/jjap.38.L975
- ISSN : 0021-4922
- CiNii Articles ID : 110003921403
- Web of Science ID : WOS:000083181100002