2006年
The effect of Ge doping for lattice-mismatched InGaP/InP(100) with epitaxial lateral overgrowth
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8
- ,
- ,
- ,
- 巻
- 3
- 号
- 8
- 開始ページ
- 2681
- 終了ページ
- +
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1002/pssc.200669530
- 出版者・発行元
- WILEY-V C H VERLAG GMBH
We have proposed the use of 1.3 mu m InGaAs/InGaP laser on an InP (100) substrate to reduce the leakage current. Because of the lattice-mismatch between InP and InGaP, epitaxial lateral overgrowth (ELO) technique is used. Ge doping is an effective way of increasing the amount of lateral growth in InP/InP lattice-matched ELO. In the InGaP/InP lattice-mismatched ELO, the crystal defects of the Ge-doped InGaP layer decrease compared to undoped sample. The Ge doping is effective for growing InGaP/InP with high crystalline quality by ELO. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- リンク情報
- ID情報
-
- DOI : 10.1002/pssc.200669530
- ISSN : 1862-6351
- Web of Science ID : WOS:000241321300036