鳥海 明

Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs 

IEEE T ELECTRON DEV 49(6) 2002年  

高誘電体ゲート絶縁膜の開発と材料科学 

電子情報通信学会論文誌 2001年  

Back Gate Effects on Threshold Voltage Sensitivity to SOI Thickness in Fully-Depleted SOI MOSFETs 

IEEE Electron Device Lett. 2001年  

Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film 

J.Appl.Phys. 2001年  

Initial oxidation features of Si(100)studied by Si2p core-level photoemission spectrocopy 

J.Electron.Spectro. 2001年  

Silicon planar Esaki diode operatig at room temperature 

IEICE Trans.Electron. 2001年  

Power consumption of hybrid circuits of single-electron transistors and complementary metal-oxide-semiconductor field-effect transistors 

IEICE Trans.Electron. 2001年  

Chemical structure of the ultrathin SiO2/Si(100)interface:An angle-resolved Si 2p photoemission study-art.no.205310 

Phys.Rev.B 2001年  

ゲート酸化膜と信頼性 

次世代ULSIプロセス技術 リアライズ社 245-251 2000年  

ゲート酸化膜薄膜化の課題と展望 

応用物理学会誌 69 1049-1059 2000年  

A Guidline for Accurate Two-Frequency Capacitance Measurement for Ultra-thin Gate Oxides 

Ext. Abst. SSDM 452-453 2000年  

Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-thin Gate Oxides 

Ext. Abst. SSDM 248-249 2000年  

Study on Zr-Silicate Interfacial Layer of ZrO2 MIS Structure Fabricated by Pulsed Laser Abration Deposition Method 

Ext. Abst. SSDM 228-229 2000年  

Novel Si Quantum Memory Structure with Self-aligned Stacked Nanocrystalline Dots 

Ext. Abst. SSDM 122-123 2000年  

Studu of Soft Breakdown in Thin SiO2 Films by Carrier-Separation Technique and Breakdown-Transient Modulation 

The Physics and Chemistry of SiO2 and The Si-SiO2 Interface-4,edited by H.Z.Massoud,I.J.R.Baumvol, M.Hirose and E.H.Poindexter 2000年  

Electron and hole mobility enhancement in Strained-Si MOSFETs on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology 

IEEE Electron Device Lett. 2000年